• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

对称干扰晶体管

-symmetric interference transistor.

作者信息

Gorbatsevich Alexander A, Krasnikov Gennadiy Ya, Shubin Nikolay M

机构信息

P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Division of solid state physics, Moscow, 119991 Russia.

JSC Molecular Electronics Research Institute, Zelenograd, Moscow 124460 Russia.

出版信息

Sci Rep. 2018 Oct 25;8(1):15780. doi: 10.1038/s41598-018-34132-0.

DOI:10.1038/s41598-018-34132-0
PMID:30361561
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6202334/
Abstract

We present a model of the molecular transistor, operation of which is based on the interplay between two physical mechanisms, peculiar to open quantum systems that act in concert: -symmetry breaking corresponding to coalescence of resonances at the exceptional point of the molecule, connected to the leads, and Fano-Feshbach antiresonance. This switching mechanism can be realised in particular in a special class of molecules with degenerate energy levels, e.g. diradicals, which possess mirror symmetry. At zero gate voltage infinitesimally small interaction of the molecule with the leads breaks the -symmetry of the system that, however, can be restored by application of the gate voltage preserving the mirror symmetry. -symmetry broken state at zero gate voltage with minimal transmission corresponds to the "off" state while the -symmetric state at non-zero gate voltage with maximum transmission - to the "on" state. At zero gate voltage energy of the antiresonance coincides with exceptional point. We construct a model of an all-electrical molecular switch based on such transistors acting as a conventional CMOS inverter and show that essentially lower power consumption and switching energy can be achieved, compared to the CMOS analogues.

摘要

我们提出了一种分子晶体管模型,其工作基于两种物理机制之间的相互作用,这两种机制是作用协同的开放量子系统所特有的:与连接到引线的分子在例外点处的共振合并相对应的对称性破缺,以及法诺 - 费什巴赫反共振。这种开关机制尤其可以在具有简并能级的一类特殊分子中实现,例如具有镜像对称性的双自由基。在零栅极电压下,分子与引线的极小相互作用会破坏系统的 - 对称性,然而,通过施加保持镜像对称性的栅极电压可以恢复这种对称性。零栅极电压下具有最小传输的 - 对称性破缺状态对应于“关”状态,而非零栅极电压下具有最大传输的 - 对称状态对应于“开”状态。在零栅极电压下,反共振能量与例外点重合。我们基于此类晶体管构建了一个全电分子开关模型,该模型充当传统的CMOS反相器,并表明与CMOS类似物相比,可以实现显著更低的功耗和开关能量。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/984d/6202334/878a4760ad14/41598_2018_34132_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/984d/6202334/ffd2d8ffc13e/41598_2018_34132_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/984d/6202334/c018a895a463/41598_2018_34132_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/984d/6202334/878a4760ad14/41598_2018_34132_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/984d/6202334/ffd2d8ffc13e/41598_2018_34132_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/984d/6202334/c018a895a463/41598_2018_34132_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/984d/6202334/878a4760ad14/41598_2018_34132_Fig3_HTML.jpg

相似文献

1
-symmetric interference transistor.对称干扰晶体管
Sci Rep. 2018 Oct 25;8(1):15780. doi: 10.1038/s41598-018-34132-0.
2
Interacting resonances and antiresonances in conjugated hydrocarbons: exceptional points and bound states in the continuum.
Phys Chem Chem Phys. 2021 Sep 29;23(37):20854-20866. doi: 10.1039/d1cp02504j.
3
GaN-based complementary inverter logic gate using InGaN/GaN superlattice capped enhancement-mode field-effect-transistors.基于氮化镓的互补反相器逻辑门,采用氮化铟镓/氮化镓超晶格覆盖增强型场效应晶体管。
Nanotechnology. 2021 May 12;32(31). doi: 10.1088/1361-6528/abfb99.
4
A Mixture of Negative-, Zero-, and Positive-Differential Transconductance Switching from Tellurium/Indium Gallium Zinc Oxide Heterostructures.碲/铟镓锌氧化物异质结构中负、零和正微分跨导的混合切换
ACS Appl Mater Interfaces. 2024 Apr 24;16(16):20705-20714. doi: 10.1021/acsami.3c19471. Epub 2024 Apr 9.
5
Dynamical symmetry breaking in transport through molecules.
Phys Rev Lett. 2006 Oct 20;97(16):166801. doi: 10.1103/PhysRevLett.97.166801. Epub 2006 Oct 16.
6
A novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology.一种基于开栅技术的新型氮化铝镓/氮化镓异质结构场效应晶体管。
Sci Rep. 2021 Nov 17;11(1):22431. doi: 10.1038/s41598-021-01917-9.
7
Quantum-interference-controlled three-terminal molecular transistors based on a single ring-shaped molecule connected to graphene nanoribbon electrodes.基于单个环形分子连接到石墨烯纳米带电极的量子干涉控制三端分子晶体管。
Phys Rev Lett. 2010 Dec 3;105(23):236803. doi: 10.1103/PhysRevLett.105.236803. Epub 2010 Dec 1.
8
Carbon-based molecular devices: Fano effects controlled by the molecule length and the gate voltage.基于碳的分子器件:通过分子长度和栅极电压控制的 Fano 效应。
Nanoscale. 2016 Aug 25;8(34):15712-9. doi: 10.1039/c6nr03451a.
9
Low Temperature (Down to 6 K) and Quantum Transport Characteristics of Stacked Nanosheet Transistors with a High-K/Metal Gate-Last Process.采用高K/金属后栅工艺的堆叠纳米片晶体管的低温(低至6K)及量子输运特性
Nanomaterials (Basel). 2024 May 23;14(11):916. doi: 10.3390/nano14110916.
10
Analysis of CMOS Logic Inverter Based on Gate-All-Around Field-Effect Transistors with the Strained-Silicon Layer for Improving the Switching Performances.基于具有应变硅层的全栅场效应晶体管的CMOS逻辑反相器用于改善开关性能的分析
J Nanosci Nanotechnol. 2020 Nov 1;20(11):6632-6637. doi: 10.1166/jnn.2020.18768.

引用本文的文献

1
Non-Hermitian Hamiltonians and Quantum Transport in Multi-Terminal Conductors.多端导体中的非厄米哈密顿量与量子输运
Entropy (Basel). 2020 Apr 17;22(4):459. doi: 10.3390/e22040459.

本文引用的文献

1
Quantum engineering of transistors based on 2D materials heterostructures.基于二维材料异质结构的晶体管量子工程。
Nat Nanotechnol. 2018 Mar;13(3):183-191. doi: 10.1038/s41565-018-0082-6. Epub 2018 Mar 6.
2
Existence of multi-radical and closed-shell semiconducting states in post-graphene organic Dirac materials.后石墨烯有机狄拉克材料中多自由基和满壳层半导体态的存在。
Nat Commun. 2017 Dec 5;8(1):1957. doi: 10.1038/s41467-017-01977-4.
3
Excitonic Coupling Modulated by Mechanical Stimuli.
J Phys Chem Lett. 2017 Sep 21;8(18):4326-4332. doi: 10.1021/acs.jpclett.7b01828. Epub 2017 Aug 30.
4
High-speed logic integrated circuits with solution-processed self-assembled carbon nanotubes.具备溶液处理自组装碳纳米管的高速逻辑集成电路。
Nat Nanotechnol. 2017 Sep;12(9):861-865. doi: 10.1038/nnano.2017.115. Epub 2017 Jul 3.
5
Carbon nanotube transistors scaled to a 40-nanometer footprint.碳纳米管晶体管缩小至 40 纳米尺寸。
Science. 2017 Jun 30;356(6345):1369-1372. doi: 10.1126/science.aan2476.
6
Molecular Orbital Rule for Quantum Interference in Weakly Coupled Dimers: Low-Energy Giant Conductivity Switching Induced by Orbital Level Crossing.弱耦合二聚体中量子干涉的分子轨道规则:轨道能级交叉诱导的低能巨电导率开关
J Phys Chem Lett. 2017 Feb 16;8(4):727-732. doi: 10.1021/acs.jpclett.6b02989. Epub 2017 Jan 30.
7
Interference-based molecular transistors.基于干涉的分子晶体管。
Sci Rep. 2016 Sep 20;6:33686. doi: 10.1038/srep33686.
8
Large-scale chemical assembly of atomically thin transistors and circuits.大规模原子层薄晶体管和电路的化学组装。
Nat Nanotechnol. 2016 Nov;11(11):954-959. doi: 10.1038/nnano.2016.115. Epub 2016 Jul 11.
9
Close relation between quantum interference in molecular conductance and diradical existence.分子电导中的量子干涉与双自由基存在之间的紧密关系。
Proc Natl Acad Sci U S A. 2016 Jan 26;113(4):E413-9. doi: 10.1073/pnas.1518206113. Epub 2016 Jan 11.
10
Quantum interference in polyenes.多烯中的量子干涉
J Chem Phys. 2014 Dec 14;141(22):224311. doi: 10.1063/1.4903043.