(111)硅基盘式谐振器品质因数极限的研究

Investigation on the Quality Factor Limit of the (111) Silicon Based Disk Resonator.

作者信息

Zhou Xin, Xiao Dingbang, Li Qingsong, Hu Qian, Hou Zhanqiang, He Kaixuan, Chen Zhihua, Zhao Chun, Wu Yulie, Wu Xuezhong, Seshia Ashwin

机构信息

College of Mechatronics Engineering and Automation, National University of Defense Technology, Changsha 410073, China.

Nanoscience Centre, University of Cambridge, Cambridge CB3 0FF, UK.

出版信息

Micromachines (Basel). 2018 Jan 22;9(1):25. doi: 10.3390/mi9010025.

DOI:10.3390/mi9010025

PMID:30393316

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6187581/

Abstract

Quality factor is one of the most important parameters for a MEMS resonator. Most MEMS resonators are dominated by thermoelastic dissipation (TED). This paper demonstrates that the TED in a disk resonator that is made of (111) single-crystal silicon is surpassed by clamping loss. The stiffness-mass decoupling design method, combined with reducing the beam width, was used to engineer high . Experiments show that of the (111) disk resonator have an upper boundary that is determined by the clamping loss caused by the unbalanced out-of-plane displacement. The origin of the out-of-plane displacement is explained by theory and simulation.

摘要

品质因数是微机电系统（MEMS）谐振器最重要的参数之一。大多数MEMS谐振器主要受热弹性耗散（TED）影响。本文表明，由（111）单晶硅制成的盘式谐振器中的TED被夹持损耗超越。采用刚度-质量解耦设计方法并结合减小梁宽度来设计高……实验表明，（111）盘式谐振器的……有一个由平面外位移不平衡引起的夹持损耗所决定的上限。通过理论和模拟解释了平面外位移的起源。