Liu Lijun, Ding Li, Zhong Donglai, Han Jie, Wang Shuo, Meng Qinghai, Qiu Chenguang, Zhang Xingye, Peng Lian-Mao, Zhang Zhiyong
Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics , Peking University , Beijing 100871 , China.
Key Laboratory of Green Printing , Institute of Chemistry, Chinese Academy of Sciences (ICCAS) , Beijing 100190 , China.
ACS Nano. 2019 Feb 26;13(2):2526-2535. doi: 10.1021/acsnano.8b09488. Epub 2019 Jan 31.
Along with ultralow-energy delay products and symmetric complementary polarities, carbon nanotube field-effect transistors (CNT FETs) are expected to be promising building blocks for energy-efficient computing technology. However, the work frequencies of the existing CNT-based complementary metal-oxide-semiconductor (CMOS) integrated circuits (ICs) are far below the requirement (850 MHz) in state-of-art wireless communication applications. In this work, we fabricated deep submicron CMOS FETs with considerably improved performance of n-type CNT FETs and hence significantly promoted the work frequency of CNT CMOS ICs to 1.98 GHz. Based on these high-speed and sensitive voltage-controlled oscillators, we then presented a wireless sensor interface circuit with working frequency up to 1.5 GHz spectrum. As a preliminary demonstration, an energy-efficient wireless temperature sensing interface system was realized combining a 150 mAh flexible Li-ion battery and a flexible antenna (center frequency of 915 MHz). In general, the CMOS-logic high-speed CNT ICs showed outstanding energy efficiency and thus may potentially advance the application of CNT-based electronics.
除了超低能量延迟产品和对称互补极性外,碳纳米管场效应晶体管(CNT FET)有望成为节能计算技术的理想构建模块。然而,现有的基于碳纳米管的互补金属氧化物半导体(CMOS)集成电路(IC)的工作频率远低于当前最先进的无线通信应用中的要求(850 MHz)。在这项工作中,我们制造了深亚微米CMOS FET,其n型CNT FET的性能有了显著提高,从而将CNT CMOS IC的工作频率大幅提高到1.98 GHz。基于这些高速且灵敏的压控振荡器,我们随后展示了一种工作频率高达1.5 GHz频谱的无线传感器接口电路。作为初步演示,结合一个150 mAh的柔性锂离子电池和一个柔性天线(中心频率为915 MHz)实现了一个节能无线温度传感接口系统。总体而言,CMOS逻辑高速CNT IC表现出卓越的能源效率,因此可能会推动基于碳纳米管的电子产品的应用。