Long Guanhua, Jin Wanlin, Xia Fan, Wang Yuru, Bai Tianshun, Chen Xingxing, Liang Xuelei, Peng Lian-Mao, Hu Youfan
Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Center for Carbon-Based Electronics, Peking University, 100871, Beijing, China.
Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, China.
Nat Commun. 2022 Nov 8;13(1):6734. doi: 10.1038/s41467-022-34621-x.
High-speed flexible circuits are required in flexible systems to realize real-time information analysis or to construct wireless communication modules for emerging applications. Here, we present scaled carbon nanotube-based thin film transistors (CNT-TFTs) with channel lengths down to 450 nm on 2-μm-thick parylene substrates, achieving state-of-the-art performances of high on-state current (187.6 μA μm) and large transconductance (123.3 μS μm). Scaling behavior analyses reveal that the enhanced performance introduced by scaling is attributed to channel resistance reduction while the contact resistance (180 ± 50 kΩ per tube) remains unchanged, which is comparable to that achieved in devices on rigid substrates, indicating great potential in ultimate scaled flexible CNT-TFTs with high performance comparable to their counterparts on rigid substrates where contact resistance dominates the performance. Five-stage flexible ring oscillators are built to benchmark the speed of scaled devices, demonstrating a 281 ps stage delay at a low supply voltage of 2.6 V.
在柔性系统中,需要高速柔性电路来实现实时信息分析或构建用于新兴应用的无线通信模块。在此,我们展示了在2μm厚的聚对二甲苯基板上制备的沟道长度低至450nm的基于碳纳米管的薄膜晶体管(CNT-TFT),实现了高导通电流(187.6μAμm)和大跨导(123.3μSμm)的先进性能。缩放行为分析表明,缩放带来的性能提升归因于沟道电阻降低,而接触电阻(每根管子180±50kΩ)保持不变,这与刚性基板上器件的接触电阻相当,表明最终缩放的柔性CNT-TFT具有巨大潜力,其高性能可与接触电阻主导性能的刚性基板上的同类器件相媲美。构建了五级柔性环形振荡器来衡量缩放器件的速度,在2.6V的低电源电压下,显示出281ps的级延迟。