Lu Hongliang, Lu Bin, Zhang Yuming, Zhang Yimen, Lv Zhijun
Key Laboratory of Wide Band-Gap Semiconductor technology, School of Microelectronics, Xidian University, Xi'an 710071, China.
Nanomaterials (Basel). 2019 Feb 1;9(2):181. doi: 10.3390/nano9020181.
The practical use of tunnel field-effect transistors is retarded by the low on-state current. In this paper, the energy-band engineering of InAs/Si heterojunction and novel device structure of source-pocket concept are combined in a single tunnel field-effect transistor to extensively boost the device performance. The proposed device shows improved tunnel on-state current and subthreshold swing. In addition, analytical potential model for the proposed device is developed and tunneling current is also calculated. Good agreement of the modeled results with numerical simulations verifies the validation of our model. With significantly reduced simulation time while acceptable accuracy, the model would be helpful for the further investigation of TFET-based circuit simulations.
隧道场效应晶体管的实际应用因导通电流低而受到阻碍。本文将InAs/Si异质结的能带工程与源极口袋概念的新型器件结构相结合，应用于单个隧道场效应晶体管中，以大幅提升器件性能。所提出的器件展现出改善的隧道导通电流和亚阈值摆幅。此外，还开发了该器件的解析势模型并计算了隧穿电流。模型结果与数值模拟结果的良好一致性验证了我们模型的有效性。该模型在精度可接受的同时显著减少了模拟时间，将有助于进一步开展基于隧道场效应晶体管的电路模拟研究。
