Edler Frederik, Miccoli Ilio, Pfnür Herbert, Tegenkamp Christoph
Institut für Physik, Technische Universität Chemnitz, Reichenhainer Str. 70, 09126 Chemnitz, Germany. Institut für Festkörperphysik, Leibniz Universität Hannover, Appelstraße 2, 30167 Hannover, Germany.
J Phys Condens Matter. 2019 May 29;31(21):214001. doi: 10.1088/1361-648X/ab094e. Epub 2019 Feb 21.
Electronic properties of low dimensional structures on surfaces can be comprehensively explored by surface transport experiments. However, the surface sensitivity of this technique to atomic structures comes along with the control of bulk related electron paths and internal interfaces. Here we analyzed the role of Schottky-barriers and space charge layers for Si-surfaces. By means of a metal submonolayer coverage deposited on vicinal Si(1 1 1), we reliably accessed subsurface transport channels via angle- and temperature-dependent in situ transport measurements. In particular, high temperature treatments performed under ultra high vacuum conditions led to the formation of surface-near bulk defects, e.g. SiC-interstitials. Obviously, these defects act as p-type dopants and easily overcompensate lightly n-doped Si substrates.
