Seyler Kyle L, Rivera Pasqual, Yu Hongyi, Wilson Nathan P, Ray Essance L, Mandrus David G, Yan Jiaqiang, Yao Wang, Xu Xiaodong
Department of Physics, University of Washington, Seattle, WA, USA.
Department of Physics and Center of Theoretical and Computational Physics, University of Hong Kong, Hong Kong, China.
Nature. 2019 Mar;567(7746):66-70. doi: 10.1038/s41586-019-0957-1. Epub 2019 Feb 25.
The formation of moiré patterns in crystalline solids can be used to manipulate their electronic properties, which are fundamentally influenced by periodic potential landscapes. In two-dimensional materials, a moiré pattern with a superlattice potential can be formed by vertically stacking two layered materials with a twist and/or a difference in lattice constant. This approach has led to electronic phenomena including the fractal quantum Hall effect, tunable Mott insulators and unconventional superconductivity. In addition, theory predicts that notable effects on optical excitations could result from a moiré potential in two-dimensional valley semiconductors, but these signatures have not been detected experimentally. Here we report experimental evidence of interlayer valley excitons trapped in a moiré potential in molybdenum diselenide (MoSe)/tungsten diselenide (WSe) heterobilayers. At low temperatures, we observe photoluminescence close to the free interlayer exciton energy but with linewidths over one hundred times narrower (around 100 microelectronvolts). The emitter g-factors are homogeneous across the same sample and take only two values, -15.9 and 6.7, in samples with approximate twist angles of 60 degrees and 0 degrees, respectively. The g-factors match those of the free interlayer exciton, which is determined by one of two possible valley-pairing configurations. At twist angles of approximately 20 degrees the emitters become two orders of magnitude dimmer; however, they possess the same g-factor as the heterobilayer at a twist angle of approximately 60 degrees. This is consistent with the umklapp recombination of interlayer excitons near the commensurate 21.8-degree twist angle. The emitters exhibit strong circular polarization of the same helicity for a given twist angle, which suggests that the trapping potential retains three-fold rotational symmetry. Together with a characteristic dependence on power and excitation energy, these results suggest that the origin of the observed effects is interlayer excitons trapped in a smooth moiré potential with inherited valley-contrasting physics. This work presents opportunities to control two-dimensional moiré optics through variation of the twist angle.
晶体固体中莫尔条纹的形成可用于操控其电子特性,而电子特性从根本上受周期性势场的影响。在二维材料中,通过垂直堆叠两层具有扭转和/或晶格常数差异的材料,可以形成具有超晶格势的莫尔条纹。这种方法已引发了包括分形量子霍尔效应、可调谐莫特绝缘体和非常规超导性在内的电子现象。此外,理论预测二维谷半导体中的莫尔势可能会对光学激发产生显著影响,但这些特征尚未通过实验检测到。在此,我们报告了在二硒化钼(MoSe)/二硒化钨(WSe)异质双层中被困在莫尔势中的层间谷激子的实验证据。在低温下,我们观察到接近自由层间激子能量的光致发光,但线宽窄了一百多倍(约100微电子伏特)。发射体的g因子在同一样品中是均匀的,在近似扭转角为60度和0度的样品中分别仅取两个值,-15.9和6.7。g因子与自由层间激子的g因子匹配,自由层间激子由两种可能的谷配对构型之一决定。在近似20度的扭转角下,发射体的亮度降低两个数量级;然而,它们在近似60度的扭转角下与异质双层具有相同的g因子。这与在接近相称的21.8度扭转角附近层间激子的倒格矢复合一致。对于给定的扭转角,发射体表现出相同螺旋性的强圆偏振,这表明捕获势保持三重旋转对称性。连同对功率和激发能量的特征依赖性,这些结果表明观察到的效应的起源是被困在具有继承的谷对比物理的平滑莫尔势中的层间激子。这项工作为通过改变扭转角来控制二维莫尔光学提供了机会。