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使用基于氧化铟锡-硅和pn-硅结的器件对大孔硅基光伏特性进行的比较研究。

Comparative study of macroporous silicon-based photovoltaic characteristics using indium tin oxide-silicon and pn-silicon junction based devices.

作者信息

Enemuo Amarachukwu N, Azmand Hojjat Rostrami, Bang Paul, Seo Sang-Woo

机构信息

Department of Electrical Engineering, The City College of the City University of New York, New York, NY 10031, USA.

出版信息

Microelectron Eng. 2018 Nov 5;199:31-39. doi: 10.1016/j.mee.2018.07.008. Epub 2018 Jul 20.

DOI:10.1016/j.mee.2018.07.008
PMID:30858646
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6407878/
Abstract

We report highly ordered macroporous silicon (Si)-based photovoltaic characteristics using indium tin oxide (ITO)/n-Si and pn-Si junction-based devices. The detailed fabrication processes including new controlled ITO etching are presented. Theoretical device simulations are performed to understand the presented device structures and propose an optimum device design based on processing limitations. The performance of ITO/n-Si junction devices directly depends on the conformal ITO coating along the pore surface. While pn-Si junction device requires additional doping step, the device can overcome the limitation of ITO conformal coating, especially for a device with high-aspect-ratio macropore structures. Experimental results also support the simulation analysis. The three-dimensional structural properties of well-defined macroporous Si coupled with the formation of photovoltaic devices are attractive for multi-functional applications.

摘要

我们报道了使用氧化铟锡（ITO）/n型硅和基于pn结的器件的高度有序的大孔硅基光伏特性。文中介绍了包括新型可控ITO蚀刻在内的详细制造工艺。进行了理论器件模拟，以了解所呈现的器件结构，并根据工艺限制提出最佳器件设计。ITO/n型硅结器件的性能直接取决于沿孔表面的保形ITO涂层。虽然pn结器件需要额外的掺杂步骤，但该器件可以克服ITO保形涂层的限制，特别是对于具有高纵横比大孔结构的器件。实验结果也支持模拟分析。定义明确的大孔硅的三维结构特性以及光伏器件的形成对于多功能应用具有吸引力。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e612/6407878/ca2faf017404/nihms-1503103-f0010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e612/6407878/0a4e8d6afb9a/nihms-1503103-f0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e612/6407878/2f9f0ad1125a/nihms-1503103-f0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e612/6407878/a285869c6794/nihms-1503103-f0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e612/6407878/640f2f94546c/nihms-1503103-f0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e612/6407878/f6820f3436ce/nihms-1503103-f0006.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e612/6407878/2152bde489e2/nihms-1503103-f0008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e612/6407878/2d9770bb58e3/nihms-1503103-f0009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e612/6407878/ca2faf017404/nihms-1503103-f0010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e612/6407878/0a4e8d6afb9a/nihms-1503103-f0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e612/6407878/2f9f0ad1125a/nihms-1503103-f0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e612/6407878/a285869c6794/nihms-1503103-f0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e612/6407878/640f2f94546c/nihms-1503103-f0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e612/6407878/f6820f3436ce/nihms-1503103-f0006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e612/6407878/ec3f1e7dbe24/nihms-1503103-f0007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e612/6407878/2152bde489e2/nihms-1503103-f0008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e612/6407878/2d9770bb58e3/nihms-1503103-f0009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e612/6407878/ca2faf017404/nihms-1503103-f0010.jpg

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Biomed Mater Eng. 2014;24(6):2203-9. doi: 10.3233/BME-141032.
5
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Chem Rev. 2010 Jan;110(1):111-31. doi: 10.1021/cr900056b.
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