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用于未来有机电子器件的具有高介电常数和低损耗的纳米复合聚对二甲苯C薄膜。

Nanocomposite-parylene C thin films with high dielectric constant and low losses for future organic electronic devices.

作者信息

Mokni Marwa, Maggioni Gianluigi, Kahouli Abdelkader, Carturan Sara M, Raniero Walter, Sylvestre Alain

机构信息

Univ. Grenoble Alpes, CNRS, Grenoble INP, G2Elab, 38000 Grenoble, France.

Dipartimento di Fisica e Astronomia "G. Galilei", Università di Padova, Via Marzolo 8, 35121 Padova (PD), Italy.

出版信息

Beilstein J Nanotechnol. 2019 Feb 12;10:428-441. doi: 10.3762/bjnano.10.42. eCollection 2019.

DOI:10.3762/bjnano.10.42
PMID:30873313
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6404397/
Abstract

Nanocomposite-parylene C (NCPC) thin films were deposited with a new technique based on the combination of chemical vapor deposition (CVD) for parylene C deposition and RF-magnetron sputtering for silver deposition. This method yields good dispersion of Ag-containing nanoparticles inside the parylene C polymer matrix. Film composition and structure were studied by using several techniques. It was found that the plasma generated by the RF-magnetron reactor modifies the film density as well as the degree of crystallinity and the size of parylene C crystallites. Moreover, silver is incorporated in the parylene matrix as an oxide phase. The average size of the Ag oxide nanoparticles is lower than 20 nm and influences the roughness of the NCPC films. Samples with various contents and sizes of silver-oxide nanoparticles were investigated by broadband dielectric spectroscopy (BDS) in view of their final application. It was found that both the content and the size of the nanoparticles influence the value of the dielectric constant and the frequency-dependence of the permittivity. In particular, β-relaxation is affected by the addition of nanoparticles as well as the dissipation factor, which is even improved. A dielectric constant of 5 ± 1 with a dissipation factor of less than 0.045 in the range from 0.1 Hz to 1 MHz is obtained for a 2.7 µm thick NCPC with 3.8% Ag content. This study provides guidance for future NCPC materials for insulating gates in organic field-effect transistors (OFETs) and advanced electronic applications.

摘要

基于化学气相沉积(CVD)法沉积聚对二甲苯C以及射频磁控溅射法沉积银相结合的新技术,制备了纳米复合聚对二甲苯C(NCPC)薄膜。该方法使含银纳米颗粒在聚对二甲苯C聚合物基体中实现了良好的分散。采用多种技术研究了薄膜的成分和结构。结果发现,射频磁控反应产生的等离子体改变了薄膜密度、结晶度以及聚对二甲苯C微晶的尺寸。此外,银以氧化物相的形式掺入聚对二甲苯基体中。氧化银纳米颗粒的平均尺寸小于20 nm,并且影响了NCPC薄膜的粗糙度。鉴于其最终应用,通过宽带介电谱(BDS)对具有不同含量和尺寸的氧化银纳米颗粒的样品进行了研究。结果发现,纳米颗粒的含量和尺寸均会影响介电常数的值以及介电常数的频率依赖性。特别是,β弛豫受到纳米颗粒添加的影响,耗散因数也受到影响,甚至有所改善。对于银含量为3.8%、厚度为2.7 µm的NCPC,在0.1 Hz至1 MHz范围内获得了介电常数为5±1且耗散因数小于0.045的结果。该研究为未来用于有机场效应晶体管(OFET)绝缘栅和先进电子应用的NCPC材料提供了指导。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63db/6404397/a565ebfcac24/Beilstein_J_Nanotechnol-10-428-g012.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63db/6404397/f07568e05be2/Beilstein_J_Nanotechnol-10-428-g002.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63db/6404397/667d6d06d4e9/Beilstein_J_Nanotechnol-10-428-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63db/6404397/de140ac8863c/Beilstein_J_Nanotechnol-10-428-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63db/6404397/26d59ed14f30/Beilstein_J_Nanotechnol-10-428-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63db/6404397/90e850d58aed/Beilstein_J_Nanotechnol-10-428-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63db/6404397/cc88c1b0f531/Beilstein_J_Nanotechnol-10-428-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63db/6404397/26a0fbc3fffe/Beilstein_J_Nanotechnol-10-428-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63db/6404397/310e47952e20/Beilstein_J_Nanotechnol-10-428-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63db/6404397/a565ebfcac24/Beilstein_J_Nanotechnol-10-428-g012.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63db/6404397/f07568e05be2/Beilstein_J_Nanotechnol-10-428-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63db/6404397/59d953521073/Beilstein_J_Nanotechnol-10-428-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63db/6404397/b3595e27f0e9/Beilstein_J_Nanotechnol-10-428-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63db/6404397/667d6d06d4e9/Beilstein_J_Nanotechnol-10-428-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63db/6404397/de140ac8863c/Beilstein_J_Nanotechnol-10-428-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63db/6404397/26d59ed14f30/Beilstein_J_Nanotechnol-10-428-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63db/6404397/90e850d58aed/Beilstein_J_Nanotechnol-10-428-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63db/6404397/cc88c1b0f531/Beilstein_J_Nanotechnol-10-428-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63db/6404397/26a0fbc3fffe/Beilstein_J_Nanotechnol-10-428-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63db/6404397/310e47952e20/Beilstein_J_Nanotechnol-10-428-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63db/6404397/a565ebfcac24/Beilstein_J_Nanotechnol-10-428-g012.jpg

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