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基于Al2O3和聚对二甲苯C双层封装的犹他电极阵列神经接口用于长期植入的长期可靠性。

Long-term reliability of Al2O3 and Parylene C bilayer encapsulated Utah electrode array based neural interfaces for chronic implantation.

作者信息

Xie Xianzong, Rieth Loren, Williams Layne, Negi Sandeep, Bhandari Rajmohan, Caldwell Ryan, Sharma Rohit, Tathireddy Prashant, Solzbacher Florian

机构信息

Department of Electrical and Computer Engineering, University of Utah, Salt Lake City, UT, USA.

出版信息

J Neural Eng. 2014 Apr;11(2):026016. doi: 10.1088/1741-2560/11/2/026016. Epub 2014 Mar 24.

Abstract

OBJECTIVE

We focus on improving the long-term stability and functionality of neural interfaces for chronic implantation by using bilayer encapsulation.

APPROACH

We evaluated the long-term reliability of Utah electrode array (UEA) based neural interfaces encapsulated by 52 nm of atomic layer deposited Al2O3 and 6 µm of Parylene C bilayer, and compared these to devices with the baseline Parylene-only encapsulation. Three variants of arrays including wired, wireless, and active UEAs were used to evaluate this bilayer encapsulation scheme, and were immersed in phosphate buffered saline (PBS) at 57 °C for accelerated lifetime testing.

MAIN RESULTS

The median tip impedance of the bilayer encapsulated wired UEAs increased from 60 to 160 kΩ during the 960 days of equivalent soak testing at 37 °C, the opposite trend to that typically observed for Parylene encapsulated devices. The loss of the iridium oxide tip metallization and etching of the silicon tip in PBS solution contributed to the increase of impedance. The lifetime of fully integrated wireless UEAs was also tested using accelerated lifetime measurement techniques. The bilayer coated devices had stable power-up frequencies at ∼910 MHz and constant radio-frequency signal strength of -50 dBm during up to 1044 days (still under testing) of equivalent soaking time at 37 °C. This is a significant improvement over the lifetime of ∼100 days achieved with Parylene-only encapsulation at 37 °C. The preliminary samples of bilayer coated active UEAs with a flip-chip bonded ASIC chip had a steady current draw of ∼3 mA during 228 days of soak testing at 37 °C. An increase in the current draw has been consistently correlated to device failures, so is a sensitive metric for their lifetime.

SIGNIFICANCE

The trends of increasing electrode impedance of wired devices and performance stability of wireless and active devices support the significantly greater encapsulation performance of this bilayer encapsulation compared with Parylene-only encapsulation. The bilayer encapsulation should significantly improve the in vivo lifetime of neural interfaces for chronic implantation.

摘要

目的

我们致力于通过使用双层封装来提高用于长期植入的神经接口的长期稳定性和功能。

方法

我们评估了由52纳米原子层沉积的Al2O3和6微米聚对二甲苯C双层封装的基于犹他电极阵列(UEA)的神经接口的长期可靠性,并将其与仅采用聚对二甲苯基线封装的设备进行比较。使用有线、无线和有源UEA三种阵列变体来评估这种双层封装方案,并将其浸入57°C的磷酸盐缓冲盐水(PBS)中进行加速寿命测试。

主要结果

在37°C下进行960天等效浸泡测试期间,双层封装的有线UEA的中位尖端阻抗从60 kΩ增加到160 kΩ,这与聚对二甲苯封装设备通常观察到的趋势相反。氧化铱尖端金属化的损失和PBS溶液中硅尖端的蚀刻导致了阻抗的增加。还使用加速寿命测量技术测试了完全集成的无线UEA的寿命。在37°C下长达1044天(仍在测试中)的等效浸泡时间内,双层涂层设备的上电频率稳定在约910 MHz,射频信号强度恒定为-50 dBm。这比在37°C下仅采用聚对二甲苯封装所实现的约100天的寿命有了显著提高。具有倒装芯片键合ASIC芯片的双层涂层有源UEA的初步样品在37°C下进行228天浸泡测试期间的稳定电流消耗约为3 mA。电流消耗的增加一直与设备故障相关,因此是其寿命的一个敏感指标。

意义

有线设备电极阻抗增加以及无线和有源设备性能稳定的趋势表明,与仅采用聚对二甲苯封装相比,这种双层封装的封装性能显著更优。双层封装应能显著提高用于长期植入的神经接口的体内寿命。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1162/4077846/8ae8c10f221d/nihms-600060-f0001.jpg

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