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通过在基于非晶氧化铟锡（a-CO）的导电桥随机存取存储器中使用优化的氧化铝（AlO）界面层来控制电阻开关、人工突触以及葡萄糖/唾液检测中的铜迁移。

Controlling Cu Migration on Resistive Switching, Artificial Synapse, and Glucose/Saliva Detection by Using an Optimized AlO Interfacial Layer in a-CO -Based Conductive Bridge Random Access Memory.

作者信息

Ginnaram Sreekanth, Qiu Jiantai Timothy, Maikap Siddheswar

机构信息

Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University (CGU), No. 259, Wen-Hwa 1st Rd., Guishan, Taoyuan 33302, Taiwan.

Division of Gynecology-Oncology, Department of Obstetrics/Gynecology, Chang Gung Memorial Hospital (CGMH), No. 5, Fu-Shing St., Taoyuan 333, Taiwan.

出版信息

ACS Omega. 2020 Mar 17;5(12):7032-7043. doi: 10.1021/acsomega.0c00795. eCollection 2020 Mar 31.

DOI:10.1021/acsomega.0c00795
PMID:32258939
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7114759/
Abstract

The Cu migration is controlled by using an optimized AlO interfacial layer, and effects on resistive switching performance, artificial synapse, and human saliva detection in an amorphous-oxygenated-carbon (a-CO )-based CBRAM platform have been investigated for the first time. The 4 nm-thick AlO layer in the Cu/AlO /a-CO /TiN O /TiN structure shows consecutive >2000 DC switching, tight distribution of SET/RESET voltages, a long program/erase (P/E) endurance of >10 cycles at a low operation current of 300 μA, and artificial synaptic characteristics under a small pulse width of 100 ns. After a P/E endurance of >10 cycles, the Cu migration is observed by both ex situ high-resolution transmission electron microscopy and energy-dispersive X-ray spectroscopy mapping images. Furthermore, the optimized Cu/AlO /a-CO /TiN O /TiN CBRAM detects glucose with a low concentration of 1 pM, and real-time measurement of human saliva with a small sample volume of 1 μL is also detected repeatedly in vitro. This is owing to oxidation-reduction of Cu electrode, and the switching mechanism is explored. Therefore, this CBRAM device is beneficial for future artificial intelligence application.

摘要

通过使用优化的AlO界面层来控制铜的迁移，并且首次研究了其对基于非晶氧化碳（a-CO）的CBRAM平台中电阻开关性能、人工突触和人类唾液检测的影响。Cu/AlO/a-CO/TiN O/TiN结构中4nm厚的AlO层显示出连续>2000次的直流开关、SET/RESET电压的紧密分布、在300μA的低工作电流下>10次循环的长编程/擦除（P/E）耐久性，以及在100ns的小脉冲宽度下的人工突触特性。在>10次循环的P/E耐久性之后，通过非原位高分辨率透射电子显微镜和能量色散X射线光谱映射图像观察到铜的迁移。此外，优化后的Cu/AlO/a-CO/TiN O/TiN CBRAM能够检测低至1pM浓度的葡萄糖，并且还能在体外对1μL小样本体积的人类唾液进行反复的实时测量。这是由于铜电极的氧化还原作用，并对其开关机制进行了探索。因此，这种CBRAM器件有利于未来的人工智能应用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1fef/7114759/9217e9d4b4f6/ao0c00795_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1fef/7114759/40d71a0e082e/ao0c00795_0007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1fef/7114759/07fa98251eae/ao0c00795_0006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1fef/7114759/8ebf2aeab4cc/ao0c00795_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1fef/7114759/4030cbed7c02/ao0c00795_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1fef/7114759/faf24f374fa1/ao0c00795_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1fef/7114759/9217e9d4b4f6/ao0c00795_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1fef/7114759/40d71a0e082e/ao0c00795_0007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1fef/7114759/07fa98251eae/ao0c00795_0006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1fef/7114759/8ebf2aeab4cc/ao0c00795_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1fef/7114759/4030cbed7c02/ao0c00795_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1fef/7114759/faf24f374fa1/ao0c00795_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1fef/7114759/9217e9d4b4f6/ao0c00795_0002.jpg

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