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用于非易失性电阻开关阵列响应推理的人工神经网络

Artificial Neural Network for Response Inference of a Nonvolatile Resistance-Switch Array.

作者信息

Kim Guhyun, Kornijcuk Vladimir, Kim Dohun, Kim Inho, Hwang Cheol Seong, Jeong Doo Seok

机构信息

Center for Electronic Materials, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 02792, Korea.

The Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Gwanakro 1, Gwanak-gu, Seoul 08826, Korea.

出版信息

Micromachines (Basel). 2019 Mar 27;10(4):219. doi: 10.3390/mi10040219.

DOI:10.3390/mi10040219
PMID:30934793
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6523178/
Abstract

An artificial neural network was utilized in the behavior inference of a random crossbar array (10 × 9 or 28 × 27 in size) of nonvolatile binary resistance-switches (in a high resistance state (HRS) or low resistance state (LRS)) in response to a randomly applied voltage array. The employed artificial neural network was a multilayer perceptron (MLP) with leaky rectified linear units. This MLP was trained with 500,000 or 1,000,000 examples. For each example, an input vector consisted of the distribution of resistance states (HRS or LRS) over a crossbar array plus an applied voltage array. That is, for a × array where voltages are applied to its rows, the input vector was × ( + 1) long. The calculated (correct) current array for each random crossbar array was used as data labels for supervised learning. This attempt was successful such that the correlation coefficient between inferred and correct currents reached 0.9995 for the larger crossbar array. This result highlights MLP that leverages its versatility to capture the quantitative linkage between input and output across the highly nonlinear crossbar array.

摘要

利用人工神经网络对非易失性二元电阻开关(处于高电阻状态(HRS)或低电阻状态(LRS))的随机交叉阵列(尺寸为10×9或28×27)在随机施加电压阵列时的行为进行推断。所采用的人工神经网络是一个带有泄漏整流线性单元的多层感知器(MLP)。该MLP用500,000或1,000,000个示例进行训练。对于每个示例,输入向量由交叉阵列上电阻状态(HRS或LRS)的分布加上施加的电压阵列组成。也就是说,对于一个向其m行施加电压的m×n阵列,输入向量长度为m×(n + 1)。为每个随机交叉阵列计算的(正确的)电流阵列用作监督学习的数据标签。这种尝试是成功的,对于较大的交叉阵列,推断电流与正确电流之间的相关系数达到了0.9995。这一结果突出了MLP利用其通用性来捕捉高度非线性交叉阵列中输入和输出之间定量联系的能力。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/83bb/6523178/f0ac40105b89/micromachines-10-00219-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/83bb/6523178/dfe3df0b1fda/micromachines-10-00219-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/83bb/6523178/36b86f46fada/micromachines-10-00219-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/83bb/6523178/d97623fbd5df/micromachines-10-00219-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/83bb/6523178/f0ac40105b89/micromachines-10-00219-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/83bb/6523178/dfe3df0b1fda/micromachines-10-00219-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/83bb/6523178/36b86f46fada/micromachines-10-00219-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/83bb/6523178/d97623fbd5df/micromachines-10-00219-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/83bb/6523178/f0ac40105b89/micromachines-10-00219-g004.jpg

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本文引用的文献

1
Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges.基于氧化还原的电阻式开关存储器——纳米离子机制、前景与挑战
Adv Mater. 2009 Jul 13;21(25-26):2632-2663. doi: 10.1002/adma.200900375.
2
Sparse coding with memristor networks.基于忆阻器网络的稀疏编码
Nat Nanotechnol. 2017 Aug;12(8):784-789. doi: 10.1038/nnano.2017.83. Epub 2017 May 22.
3
Experimental Demonstration of Feature Extraction and Dimensionality Reduction Using Memristor Networks.基于忆阻器网络的特征提取和降维的实验演示。
Nano Lett. 2017 May 10;17(5):3113-3118. doi: 10.1021/acs.nanolett.7b00552. Epub 2017 May 1.
4
Deep learning.深度学习。
Nature. 2015 May 28;521(7553):436-44. doi: 10.1038/nature14539.
5
Memristive devices for computing.忆阻器计算设备。
Nat Nanotechnol. 2013 Jan;8(1):13-24. doi: 10.1038/nnano.2012.240.
6
Emerging memories: resistive switching mechanisms and current status.新兴记忆:电阻开关机制与现状。
Rep Prog Phys. 2012 Jul;75(7):076502. doi: 10.1088/0034-4885/75/7/076502. Epub 2012 Jun 28.