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用于负电容器件和非易失性存储器应用的纳米晶体嵌入式绝缘体（NEI）铁电场效应晶体管

Nanocrystal-Embedded-Insulator (NEI) Ferroelectric FETs for Negative Capacitance Device and Non-Volatile Memory Applications.

作者信息

Peng Yue, Han Genquan, Xiao Wenwu, Wu Jibao, Liu Yan, Zhang Jincheng, Hao Yue

机构信息

State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, 710071, China.

School of Materials Science and Engineering, Xiangtan University, Xiangtan, 411105, China.

出版信息

Nanoscale Res Lett. 2019 Apr 1;14(1):115. doi: 10.1186/s11671-019-2943-9.

DOI:10.1186/s11671-019-2943-9
PMID:30937641
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6443763/
Abstract

We report a novel nanocrystal-embedded-insulator (NEI) ferroelectric field-effect transistor (FeFET) with very thin unified-ferroelectric/dielectric (FE/DE) insulating layer, which is promising for low-voltage logic and non-volatile memory (NVM) applications. The ferroelectric nature of the NEI layers comprising orthorhombic ZrO nanocrystals embedded in amorphous AlO is proved by polarization voltage measurements, piezoresponse force microscopy, and electrical measurements. The temperature dependent performance and endurance behavior of a NEI negative capacitance FET (NCFET) are investigated. A FeFET with 3.6 nm thick FE/DE achieves a memory window larger than 1 V, paving a pathway for ultimate scaling of FE thickness to enable three-dimensional FeFETs with very small fin pitch.

摘要

我们报道了一种新型的嵌入纳米晶体的绝缘体（NEI）铁电场效应晶体管（FeFET），其具有非常薄的统一铁电/介电（FE/DE）绝缘层，这对于低压逻辑和非易失性存储器（NVM）应用很有前景。通过极化电压测量、压电力显微镜和电学测量，证明了由嵌入非晶AlO中的正交ZrO纳米晶体组成的NEI层的铁电性质。研究了NEI负电容场效应晶体管（NCFET）的温度依赖性性能和耐久性行为。具有3.6nm厚FE/DE的FeFET实现了大于1V的存储窗口，为最终缩小FE厚度以实现具有非常小鳍间距的三维FeFET铺平了道路。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a447/6443763/acc970b1c82e/11671_2019_2943_Fig13_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a447/6443763/730c00b90e96/11671_2019_2943_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a447/6443763/394403e1cef5/11671_2019_2943_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a447/6443763/5c9f1aeca249/11671_2019_2943_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a447/6443763/42047a5c6ce9/11671_2019_2943_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a447/6443763/8575cbc5a6bc/11671_2019_2943_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a447/6443763/990bcf592f12/11671_2019_2943_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a447/6443763/94a963fb8c23/11671_2019_2943_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a447/6443763/9661fd732864/11671_2019_2943_Fig8_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a447/6443763/80feee40ecc8/11671_2019_2943_Fig9_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a447/6443763/08a269773647/11671_2019_2943_Fig10_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a447/6443763/0293e13656d7/11671_2019_2943_Fig11_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a447/6443763/7bdb0ad06f19/11671_2019_2943_Fig12_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a447/6443763/acc970b1c82e/11671_2019_2943_Fig13_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a447/6443763/730c00b90e96/11671_2019_2943_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a447/6443763/394403e1cef5/11671_2019_2943_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a447/6443763/5c9f1aeca249/11671_2019_2943_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a447/6443763/42047a5c6ce9/11671_2019_2943_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a447/6443763/8575cbc5a6bc/11671_2019_2943_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a447/6443763/990bcf592f12/11671_2019_2943_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a447/6443763/94a963fb8c23/11671_2019_2943_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a447/6443763/9661fd732864/11671_2019_2943_Fig8_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a447/6443763/80feee40ecc8/11671_2019_2943_Fig9_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a447/6443763/08a269773647/11671_2019_2943_Fig10_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a447/6443763/0293e13656d7/11671_2019_2943_Fig11_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a447/6443763/7bdb0ad06f19/11671_2019_2943_Fig12_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a447/6443763/acc970b1c82e/11671_2019_2943_Fig13_HTML.jpg

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本文引用的文献

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Use of negative capacitance to provide voltage amplification for low power nanoscale devices.
利用负电容为低功耗纳米级器件提供电压放大。
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