Han Young Joon, An Kunsik, Kang Kyung Tae, Ju Byeong-Kwon, Cho Kwan Hyun
Micro/Nano Scale Manufacturing Group, Korea Institute of Industrial Technology (KITECH), 143, Hanggaul-ro, Sangnok-gu, Ansan-si, 15588, Korea.
Department of Electrical and Electronics Engineering, College of Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul, 02841, Korea.
Sci Rep. 2019 Jul 17;9(1):10385. doi: 10.1038/s41598-019-46858-6.
In this study, we introduce optimization of the annealing conditions for improvement of hardness and hole transporting properties of high-molecular weight poly [9, 9-dioctylfluorene-co-N-(4-(3-methylpropyl)) diphenylamine] (TFB) film used as a Hole Transport Layer (HTL) of Quantum-dot Light-emitting Diodes (QLEDs). As annealing temperatures were increased from 120 °C to 150 °C or more, no dissolving or intermixing phenomena at the interface between HTL and Quantum-Dot Emission Layer (QDs EML) was observed. However, when the annealing temperatures was increased from 150 °C to 210 °C, the intensity of the absorbance peaks as determined by Fourier Transform Infrared (FT-IR) measurement was found to relatively decrease, and hole transporting properties were found to decrease in the measurement of current density - voltage (CD - V) and capacitance - voltage (C - V) characteristics of Hole Only Devices (HODs) due to thermal damage. At the annealing temperature of 150 °C, the QLEDs device was optimized with TFB films having good hardness and best hole transporting properties for solution processed QLEDs.
在本研究中，我们介绍了退火条件的优化，以改善用作量子点发光二极管（QLED）空穴传输层（HTL）的高分子量聚[9,9-二辛基芴-co-N-(4-(3-甲基丙基))二苯胺]（TFB）薄膜的硬度和空穴传输性能。随着退火温度从120°C升高到150°C或更高，未观察到HTL与量子点发射层（QDs EML）之间的界面处有溶解或混合现象。然而，当退火温度从150°C升高到210°C时，通过傅里叶变换红外（FT-IR）测量确定的吸光度峰强度相对降低，并且由于热损伤，在仅空穴器件（HOD）的电流密度-电压（CD-V）和电容-电压（C-V）特性测量中发现空穴传输性能下降。在150°C的退火温度下，QLED器件通过具有良好硬度和最佳空穴传输性能的TFB薄膜进行了优化，用于溶液处理的QLED。
