Lv Liang, Zhuge Fuwei, Xie Fengjun, Xiong Xujing, Zhang Qingfu, Zhang Nan, Huang Yu, Zhai Tianyou
State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China.
Nat Commun. 2019 Jul 26;10(1):3331. doi: 10.1038/s41467-019-11328-0.
Ferroelectric engineered pn doping in two-dimensional (2D) semiconductors hold essential promise in realizing customized functional devices in a reconfigurable manner. Here, we report the successful pn doping in molybdenum disulfide (MoS) optoelectronic device by local patterned ferroelectric polarization, and its configuration into lateral diode and npn bipolar phototransistors for photodetection from such a versatile playground. The lateral pn diode formed in this way manifests efficient self-powered detection by separating ~12% photo-generated electrons and holes. When polarized as bipolar phototransistor, the device is customized with a gain ~1000 by its transistor action, reaching the responsivity ~12 A W and detectivity over 10 Jones while keeping a fast response speed within 20 μs. A promising pathway toward high performance optoelectronics is thus opened up based on local ferroelectric polarization coupled 2D semiconductors.
二维（2D）半导体中的铁电工程pn掺杂在以可重构方式实现定制功能器件方面具有重要前景。在此，我们报告了通过局部图案化铁电极化在二硫化钼（MoS）光电器件中成功实现pn掺杂，并将其配置为横向二极管和npn双极光电晶体管，用于从这个多功能平台进行光检测。以这种方式形成的横向pn二极管通过分离约12%的光生电子和空穴表现出高效的自供电检测。当极化作为双极光电晶体管时，该器件通过其晶体管作用定制增益约为1000，响应度达到约12 A/W，探测率超过10琼斯，同时在20 μs内保持快速响应速度。基于局部铁电极化耦合的二维半导体，由此开辟了一条通往高性能光电子学的有前途的途径。
