通过化学气相沉积法大面积生长少层InTe薄膜及其磁阻特性
Large area growth of few-layer InTe films by chemical vapor deposition and its magnetoresistance properties.
作者信息
Zhang Shaohui, Zhang Jingyang, Liu Baosheng, Jia Xiaobo, Wang Guofu, Chang Haixin
机构信息
Center for Materials Science and Engineering, School of Electrical and Information Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China.
Harbin Institute of Technology, Harbin, 150001, China.
出版信息
Sci Rep. 2019 Jul 29;9(1):10951. doi: 10.1038/s41598-019-47520-x.
In this work we report a facile route to grow large area, uniform, continuous and few-layer α-InTe film via chemical vapor deposition (CVD) methods. The characterizations show the large area of CVD-grown few-layer α-InTe. This method guarantees the precise control of thickness down to few layers and large area preparation. The magnetoresistance (MR) properties of few-layer InTe was investigated from 2 to 300 K and its MR stability under long exposure to ambient air was studied for the first time. Few-layer of α-InTe shows a positive MR and the largest transverse MR was observed to about 11% at 2 K and a high stability of MR to long time exposure in air up to 21 weeks.
在这项工作中，我们报告了一种通过化学气相沉积（CVD）方法生长大面积、均匀、连续且层数少的α-InTe薄膜的简便途径。表征结果显示了CVD生长的少层α-InTe的大面积。该方法确保了对低至几层的厚度进行精确控制以及大面积制备。对少层InTe的磁电阻（MR）特性在2至300 K范围内进行了研究，并且首次研究了其在长时间暴露于环境空气中时的MR稳定性。少层α-InTe表现出正磁电阻，在2 K时观察到最大横向磁电阻约为11%，并且在空气中长时间暴露长达21周时磁电阻具有高稳定性。
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