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水中硅电极上的光致电化学发光

Photoinduced Electrochemiluminescence at Silicon Electrodes in Water.

作者信息

Zhao Yiran, Yu Jing, Xu Guobao, Sojic Neso, Loget Gabriel

机构信息

Univ Rennes, CNRS, ISCR (Institut des Sciences Chimiques de Rennes)-UMR 6226 , F-35000 Rennes , France.

University of Bordeaux , Bordeaux INP, ISM, UMR CNRS 5255 , 33607 Pessac , France.

出版信息

J Am Chem Soc. 2019 Aug 21;141(33):13013-13016. doi: 10.1021/jacs.9b06743. Epub 2019 Aug 8.

Abstract

We introduce the photoinduced electrochemiluminescence (P-ECL) of the model ECL system involving the simultaneous oxidation of [Ru(bpy)] and tri--propylamine (TPrA). This system classically requires highly anodic potentials of greater than +1 V vs SCE for ECL generation. In the reported approach, the ECL emission is triggered by holes (h) photogenerated in an n-type semiconductor (SC) electrode, which is normally highly challenging because of competing photocorrosion occurring on SC electrodes in aqueous electrolytes. We employ here Si-based tunnel electrodes protected by few-nanometer-thick SiO and Ni stabilizing thin films and demonstrate that this construct allows generation of P-ECL in water. This system is based on an upconversion process where light absorption at 810 nm induces ECL emission (635 nm) at a record low electrochemical potential of 0.5 V vs SCE. Neither this excitation wavelength nor this low applied potential is able to stimulate ECL light if applied alone, but their synergetic action leads to stable and intense ECL emission in water. This P-ECL strategy can be extended to other luminophores and is promising for ultrasensitive detection and light-addressable and imaging devices.

摘要

我们介绍了涉及[Ru(bpy)]和三丙胺(TPrA)同时氧化的模型电化学发光(ECL)系统的光致电化学发光(P-ECL)。对于该系统,传统上需要高于+1 V(相对于饱和甘汞电极(SCE))的高阳极电位才能产生ECL。在报道的方法中,ECL发射由n型半导体(SC)电极中光生空穴(h)触发,由于在水性电解质中SC电极上发生竞争性光腐蚀,这通常极具挑战性。我们在此采用由几纳米厚的SiO和Ni稳定薄膜保护的硅基隧道电极,并证明这种结构能够在水中产生P-ECL。该系统基于一种上转换过程,其中810 nm处的光吸收在相对于SCE为0.5 V的创纪录低电化学电位下诱导ECL发射(635 nm)。单独施加该激发波长或该低施加电位均无法刺激ECL发光,但它们的协同作用导致在水中产生稳定且强烈的ECL发射。这种P-ECL策略可扩展到其他发光体,对于超灵敏检测以及光寻址和成像设备具有广阔前景。

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