Chen Yu-Xiang, Lee Jian-Jhang, Chen Ding-Rui, Lin You-Chen, Chin Hao-Ting, Huang Xiu-Yu, Chiu Sheng-Kuei, Ting Chu-Chi, Hofmann Mario, Hsieh Ya-Ping
Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 10617, Taiwan.
International Graduate Program of Molecular Science and Technology, National Taiwan University, Taipei, 10617, Taiwan.
Nano Lett. 2025 Jun 11;25(23):9463-9469. doi: 10.1021/acs.nanolett.5c02169. Epub 2025 May 28.
Defects in two-dimensional (2D) materials represent both challenges and opportunities to their optoelectronic performance. While defects limit the carrier mobility in transistors through increased charge scattering, they also enhance 2D material functionality in sensors. Electron cloaking, a process that reduces Coulomb scattering via localized electron-defect interactions, has recently been shown to mitigate the performance degradation of bulk semiconductors in the presence of defects. We demonstrate the realization of electron cloaking in 2D materials through the metal decoration of defects. Sulfur vacancies were introduced in MoS and selectively decorated with aluminum using atomic layer deposition. Theoretical and experimental characterization demonstrate the suppression of electronic scattering through localized interactions. Optoelectronic measurements reveal a significant improvement in carrier mobility and lifetime, highlighting the effectiveness of the cloaking mechanism. Our findings open a route independently to maximize performance and functionality of optoelectronic devices, which is illustrated by the realization photosensors with unprecedented sensitivity and speed.
二维（2D）材料中的缺陷对其光电性能而言既是挑战也是机遇。缺陷虽会因电荷散射增加而限制晶体管中的载流子迁移率，但同时也会增强传感器中二维材料的功能。电子隐身是一种通过局部电子 - 缺陷相互作用减少库仑散射的过程，最近已被证明可减轻存在缺陷时体半导体的性能退化。我们通过对缺陷进行金属修饰，展示了在二维材料中实现电子隐身。在二硫化钼中引入硫空位，并使用原子层沉积法用铝对其进行选择性修饰。理论和实验表征表明，通过局部相互作用可抑制电子散射。光电测量结果显示载流子迁移率和寿命有显著提高，突出了隐身机制的有效性。我们的研究结果开辟了一条独立的途径，可最大化光电器件的性能和功能，这一点通过实现具有前所未有的灵敏度和速度的光电探测器得以体现。
