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过渡金属二硫属化物异质双层中的电荷积累效应

Charge-Accumulation Effect in Transition Metal Dichalcogenide Heterobilayers.

作者信息

Ye Tong, Li Junze, Li Dehui

机构信息

School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China.

Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China.

出版信息

Small. 2019 Oct;15(42):e1902424. doi: 10.1002/smll.201902424. Epub 2019 Aug 26.

Abstract

Charge transfer in transition-metal-dichalcogenides (TMDs) heterostructures is a prerequisite for the formation of interlayer excitons, which hold great promise for optoelectronics and valleytronics. Charge accumulation accompanied by a charge-transfer process can introduce considerable effect on interlayer exciton-based applications; nevertheless, this aspect has been rarely studied up to date. This work demonstrates how the charge accumulation affects the light emission of interlayer excitons in van der Waals heterobilayers (HBs) consisting of monolayer WSe and WS . As excitation power increases, the photoluminescence intensity of interlayer excitons increases more rapidly than that of intralayer excitons. The phenomenon can be explained by charge-accumulation effect, which not only increases the recombination probability of interlayer excitons but also saturates the charge-transfer process. This scenario is further confirmed by a careful examination of trion binding energy of WS , which nonlinearly increases with the increase of the excitation power before reaching a maximum of about 75 meV. These investigations provide a better understanding of interlayer excitons and trions in HBs, which may provoke further explorations of excitonic physics as well as TMDs-based devices.

摘要

过渡金属二硫属化物(TMDs)异质结构中的电荷转移是层间激子形成的先决条件,层间激子在光电子学和谷电子学方面具有巨大潜力。伴随电荷转移过程的电荷积累会对基于层间激子的应用产生相当大的影响;然而,到目前为止这方面的研究还很少。这项工作展示了电荷积累如何影响由单层WSe和WS组成的范德华异质双层(HBs)中层间激子的发光。随着激发功率的增加,层间激子的光致发光强度比层内激子的增加得更快。这种现象可以用电荷积累效应来解释,电荷积累效应不仅增加了层间激子的复合概率,还使电荷转移过程饱和。通过仔细研究WS的三重激子结合能进一步证实了这种情况,在达到约75 meV的最大值之前,WS的三重激子结合能随着激发功率的增加而非线性增加。这些研究有助于更好地理解HBs中的层间激子和三重激子,这可能会激发对激子物理学以及基于TMDs的器件的进一步探索。

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