Monolayer MoS field effect transistor with low Schottky barrier height with ferromagnetic metal contacts.

Two-dimensional MoS has emerged as promising material for nanoelectronics and spintronics due to its exotic properties. However, high contact resistance at metal semiconductor MoS interface still remains an open issue. Here, we report electronic properties of field effect transistor devices using monolayer MoS channels and permalloy (Py) as ferromagnetic (FM) metal contacts. Monolayer MoS channels were directly grown on SiO/Si substrate via chemical vapor deposition technique. The increase in current with back gate voltage (V) shows the tunability of FET characteristics. The Schottky barrier height (SBH) estimated for Py/MoS contacts is found to be +28.8 meV (at V = 0V), which is the smallest value reported so-far for any direct metal (magnetic or non-magnetic)/monolayer MoS contact. With the application of positive gate voltage, SBH shows a reduction, which reveals ohmic behavior of Py/MoS contacts. Low SBH with controlled ohmic nature of FM contacts is a primary requirement for MoS based spintronics and therefore using directly grown MoS channels in the present study can pave a path towards high performance devices for large scale applications.