Zhao Dong-Hui, Tian Zi-Liang, Liu Hao, Gu Zheng-Hao, Zhu Hao, Chen Lin, Sun Qing-Qing, Zhang David Wei
State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, P.R. China.
ACS Appl Mater Interfaces. 2020 Mar 25;12(12):14308-14314. doi: 10.1021/acsami.9b21727. Epub 2020 Mar 11.
Substantial progress has been made in the experimental synthesis of large-area two-dimensional transition metal dichalcogenide (TMD) thin films in recent years. This has provided a solid basis to build non-planar structures to implement the unique electrical and mechanical properties of TMDs in various nanoelectronic and mechano-electric devices, which, however, has not yet been fully explored. In this work, we demonstrate the fabrication and characterization of MoS field-effect transistors (FETs) with an omega (Ω)-shaped gate. The FET is built based on the SiO/MoS core-shell heterostructure integrated using atomic layer deposition (ALD) technique. The MoS thin film has been uniformly deposited by ALD as wrapping the SiO nanowire forming the channel region, which is further surrounded by the gate dielectric and the Ω-gate. The device has exhibited n-type behavior with effective switching comparable to the reference device with a planar MoS channel built on a SiO/Si substrate. Our work opens up an attractive avenue to realize novel device structures utilizing synthetic TMDs, thereby broadening their potential application in future advanced nanoelectronics.
近年来，大面积二维过渡金属二硫属化物（TMD）薄膜的实验合成取得了重大进展。这为构建非平面结构提供了坚实基础，以便在各种纳米电子和机电设备中实现TMD独特的电学和力学性能，然而，这尚未得到充分探索。在这项工作中，我们展示了具有Ω形栅极的MoS场效应晶体管（FET）的制造和表征。该FET基于使用原子层沉积（ALD）技术集成的SiO/MoS核壳异质结构构建。通过ALD均匀沉积MoS薄膜，使其包裹形成沟道区的SiO纳米线，该沟道区进一步被栅极电介质和Ω形栅极包围。该器件表现出n型行为，其有效开关性能与基于SiO/Si衬底构建的具有平面MoS沟道的参考器件相当。我们的工作为利用合成TMD实现新型器件结构开辟了一条有吸引力的途径，从而拓宽了它们在未来先进纳米电子学中的潜在应用。
