Zhuk Maksim, Zarubin Sergei, Karateev Igor, Matveyev Yury, Gornev Evgeny, Krasnikov Gennady, Negrov Dmitiry, Zenkevich Andrei
Laboratory of Functional Materials and Devices for Nanoelectronics, Moscow Institute of Physics and Technology, Moscow, Russia.
National Research Center, Kurchatov Institute, Moscow, Russia.
Front Neurosci. 2020 Feb 26;14:94. doi: 10.3389/fnins.2020.00094. eCollection 2020.
The development of highly integrated electrophysiological devices working in direct contact with living neuron tissue opens new exciting prospects in the fields of neurophysiology and medicine, but imposes tight requirements on the power dissipated by electronics. preprocessing of neuronal signals can substantially decrease the power dissipated by external data interfaces, and the addition of embedded non-volatile memory would significantly improve the performance of a co-processor in real-time processing of the incoming information stream from the neuron tissue. Here, we evaluate the parameters of TaO -based resistive switching (RS) memory devices produced by magnetron sputtering technique and integrated with the 180-nm CMOS field-effect transistors as possible candidates for on-chip memory in the hybrid neurointerface under development. The electrical parameters of the optimized one-transistor-one-resistor (1T-1R) devices, such as the switching voltage (approx. ±1 V), uniformity of the / ratio (∼10), read/write speed (<40 ns), and the number of the writing cycles (up to 10), are satisfactory. The energy values for writing and reading out a bit ∼30 and ∼0.1 pJ, respectively, are also suitable for the desired neurointerfaces, but are still far too high once the prospective applications are considered. Challenges arising in the course of the prospective fabrication of the proposed TaO -based RS devices in the back-end-of-line process are identified.
与活神经元组织直接接触工作的高度集成电生理设备的发展,在神经生理学和医学领域开启了令人兴奋的新前景,但对电子设备的功耗提出了严格要求。神经元信号的预处理可以大幅降低外部数据接口的功耗,而添加嵌入式非易失性存储器将显著提高协处理器对来自神经元组织的输入信息流进行实时处理的性能。在此,我们评估了通过磁控溅射技术制造并与180纳米互补金属氧化物半导体场效应晶体管集成的基于TaO的电阻式开关(RS)存储器件的参数,这些器件可能是正在开发的混合神经接口中片上存储器的候选者。优化后的单晶体管单电阻(1T-1R)器件的电学参数,如开关电压(约±1 V)、/ 比的均匀性(约10)、读/写速度(<40 ns)和写入周期数(高达10次),都令人满意。写入和读出一位的能量值分别约为30和0.1 pJ,对于所需的神经接口来说也是合适的,但一旦考虑到预期应用,仍然过高。确定了在后端工艺中预期制造所提出的基于TaO的RS器件过程中出现的挑战。