Nies Cara-Lena, Nolan Michael
Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork, T12 R5CP, Ireland.
Beilstein J Nanotechnol. 2020 Feb 26;11:391-406. doi: 10.3762/bjnano.11.30. eCollection 2020.
Layered materials, such as MoS, are being intensely studied due to their interesting properties and wide variety of potential applications. These materials are also interesting as supports for low-dimensional metals for catalysis, while recent work has shown increased interest in using 2D materials in the electronics industry as a Cu diffusion barrier in semiconductor device interconnects. The interaction between different metal structures and MoS monolayers is therefore of significant importance and first-principles simulations can probe aspects of this interaction not easily accessible to experiment. Previous theoretical studies have focused particularly on the adsorption of a range of metallic elements, including first-row transition metals, as well as Ag and Au. However, most studies have examined single-atom adsorption or adsorbed nanoparticles of noble metals. This means there is a knowledge gap in terms of thin film nucleation on 2D materials. To begin addressing this issue, we present in this paper a first-principles density functional theory (DFT) study of the adsorption of small Cu ( = 1-4) structures on 2D MoS as a model system. We find on a perfect MoS monolayer that a single Cu atom prefers an adsorption site above the Mo atom. With increasing nanocluster size the nanocluster binds more strongly when Cu atoms adsorb atop the S atoms. Stability is driven by the number of Cu-Cu interactions and the distance between adsorption sites, with no obvious preference towards 2D or 3D structures. The introduction of a single S vacancy in the monolayer enhances the copper binding energy, although some Cu nanoclusters are actually unstable. The effect of the vacancy is localised around the vacancy site. Finally, on both the pristine and the defective MoS monolayer, the density-of-states analysis shows that the adsorption of Cu introduces new electronic states as a result of partial Cu oxidation, but the metallic character of Cu nanoclusters is preserved.
诸如二硫化钼(MoS)之类的层状材料因其有趣的特性和广泛的潜在应用而受到深入研究。这些材料作为催化用低维金属的载体也很有趣,而最近的研究表明,在电子工业中使用二维材料作为半导体器件互连中的铜扩散阻挡层的兴趣日益增加。因此,不同金属结构与二硫化钼单层之间的相互作用具有重要意义,第一性原理模拟可以探究这种相互作用中实验不易获得的方面。先前的理论研究特别关注了一系列金属元素的吸附,包括第一行过渡金属以及银和金。然而,大多数研究都考察了单原子吸附或贵金属吸附纳米颗粒。这意味着在二维材料上的薄膜成核方面存在知识空白。为了开始解决这个问题,我们在本文中展示了一项关于小铜团簇(n = 1 - 4)在二维二硫化钼上吸附的第一性原理密度泛函理论(DFT)研究,作为一个模型系统。我们发现在完美的二硫化钼单层上,单个铜原子更喜欢吸附在钼原子上方的位点。随着纳米团簇尺寸的增加,当铜原子吸附在硫原子顶部时,纳米团簇结合得更牢固。稳定性由铜 - 铜相互作用的数量和吸附位点之间的距离驱动,对二维或三维结构没有明显偏好。在单层中引入单个硫空位会增强铜的结合能,尽管一些铜纳米团簇实际上是不稳定的。空位的影响局限在空位位点周围。最后,在原始的和有缺陷的二硫化钼单层上,态密度分析表明,由于部分铜氧化,铜的吸附引入了新的电子态,但铜纳米团簇的金属特性得以保留。