6H-SiC 化学镀蚀刻的新方法。

Novel Method for Electroless Etching of 6H-SiC.

作者信息

Károlyházy Gyula, Beke Dávid, Zalka Dóra, Lenk Sándor, Krafcsik Olga, Kamarás Katalin, Gali Ádám

机构信息

Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Konkoly-Thege Miklós út 29-33, H-1121 Budapest, Hungary.

Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki út 8, H-1111 Budapest, Hungary.

出版信息

Nanomaterials (Basel). 2020 Mar 17;10(3):538. doi: 10.3390/nano10030538.

DOI:10.3390/nano10030538

PMID:32192147

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7153389/

Abstract

In this article, we report an electroless method to fabricate porous hexagonal silicon carbide and hexagonal silicon carbide nanoparticles (NPs) as small as 1 nm using wet chemical stain etching. We observe quantum confinement effect for ultrasmall hexagonal SiC NPs in contrast to the cubic SiC NPs. We attribute this difference to the various surface terminations of the two polytypes of SiC NPs.

摘要

在本文中，我们报道了一种化学镀方法，该方法通过湿化学腐蚀来制备多孔六方碳化硅和尺寸小至1nm的六方碳化硅纳米颗粒（NPs）。与立方碳化硅纳米颗粒相比，我们观察到超小六方碳化硅纳米颗粒的量子限制效应。我们将这种差异归因于两种多型碳化硅纳米颗粒的不同表面终端。