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6H-SiC 化学镀蚀刻的新方法。

Novel Method for Electroless Etching of 6H-SiC.

作者信息

Károlyházy Gyula, Beke Dávid, Zalka Dóra, Lenk Sándor, Krafcsik Olga, Kamarás Katalin, Gali Ádám

机构信息

Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Konkoly-Thege Miklós út 29-33, H-1121 Budapest, Hungary.

Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki út 8, H-1111 Budapest, Hungary.

出版信息

Nanomaterials (Basel). 2020 Mar 17;10(3):538. doi: 10.3390/nano10030538.

DOI:10.3390/nano10030538
PMID:32192147
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7153389/
Abstract

In this article, we report an electroless method to fabricate porous hexagonal silicon carbide and hexagonal silicon carbide nanoparticles (NPs) as small as 1 nm using wet chemical stain etching. We observe quantum confinement effect for ultrasmall hexagonal SiC NPs in contrast to the cubic SiC NPs. We attribute this difference to the various surface terminations of the two polytypes of SiC NPs.

摘要

在本文中,我们报道了一种化学镀方法,该方法通过湿化学腐蚀来制备多孔六方碳化硅和尺寸小至1nm的六方碳化硅纳米颗粒(NPs)。与立方碳化硅纳米颗粒相比,我们观察到超小六方碳化硅纳米颗粒的量子限制效应。我们将这种差异归因于两种多型碳化硅纳米颗粒的不同表面终端。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4742/7153389/2877dfe44bc7/nanomaterials-10-00538-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4742/7153389/b8561c766909/nanomaterials-10-00538-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4742/7153389/850f5f7ca06f/nanomaterials-10-00538-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4742/7153389/12d571f59db4/nanomaterials-10-00538-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4742/7153389/c674ed0d9c38/nanomaterials-10-00538-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4742/7153389/2877dfe44bc7/nanomaterials-10-00538-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4742/7153389/b8561c766909/nanomaterials-10-00538-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4742/7153389/850f5f7ca06f/nanomaterials-10-00538-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4742/7153389/12d571f59db4/nanomaterials-10-00538-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4742/7153389/c674ed0d9c38/nanomaterials-10-00538-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4742/7153389/2877dfe44bc7/nanomaterials-10-00538-g005.jpg

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本文引用的文献

1
Hybrid Anodic and Metal-Assisted Chemical Etching Method Enabling Fabrication of Silicon Carbide Nanowires.用于制备碳化硅纳米线的混合阳极与金属辅助化学蚀刻方法
Small. 2019 Feb;15(7):e1803898. doi: 10.1002/smll.201803898. Epub 2019 Jan 22.
2
Harnessing no-photon exciton generation chemistry to engineer semiconductor nanostructures.利用无光子激子产生化学来工程半导体纳米结构。
Sci Rep. 2017 Sep 6;7(1):10599. doi: 10.1038/s41598-017-10751-x.
3
Dominant luminescence is not due to quantum confinement in molecular-sized silicon carbide nanocrystals.
主发光不是由于分子尺寸碳化硅纳米晶中的量子限制。
Nanoscale. 2015 Jul 7;7(25):10982-8. doi: 10.1039/c5nr01204j. Epub 2015 Jun 9.
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Coherent control of single spins in silicon carbide at room temperature.室温下碳化硅中单自旋的相干控制。
Nat Mater. 2015 Feb;14(2):164-8. doi: 10.1038/nmat4145. Epub 2014 Dec 1.
5
Room temperature quantum emission from cubic silicon carbide nanoparticles.室温下立方碳化硅纳米颗粒的量子发射。
ACS Nano. 2014 Aug 26;8(8):7938-47. doi: 10.1021/nn502719y. Epub 2014 Jul 24.
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A silicon carbide room-temperature single-photon source.碳化硅室温单光子源。
Nat Mater. 2014 Feb;13(2):151-6. doi: 10.1038/nmat3806. Epub 2013 Nov 17.
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Vapor phase mediated cellular uptake of sub 5 nm nanoparticles.气相介导的亚5纳米纳米颗粒的细胞摄取。
Nanoscale Res Lett. 2012 Apr 11;7(1):212. doi: 10.1186/1556-276X-7-212.
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Room temperature coherent control of defect spin qubits in silicon carbide.室温下碳化硅中缺陷自旋量子比特的相干控制。
Nature. 2011 Nov 2;479(7371):84-7. doi: 10.1038/nature10562.
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Quantum computing with defects.缺陷量子计算。
Proc Natl Acad Sci U S A. 2010 May 11;107(19):8513-8. doi: 10.1073/pnas.1003052107. Epub 2010 Apr 19.
10
3C-SiC nanocrystals as fluorescent biological labels.3C - 碳化硅纳米晶体作为荧光生物标记物。
Small. 2008 Aug;4(8):1058-62. doi: 10.1002/smll.200800080.