Bi Zhaoxia, Lu Taiping, Colvin Jovana, Sjögren Elis, Vainorius Neimantas, Gustafsson Anders, Johansson Jonas, Timm Rainer, Lenrick Filip, Wallenberg Reine, Monemar Bo, Samuelson Lars
Division of Solid State Physics, Department of Physics, Lund University, Box 118, S-221 00 Lund, Sweden.
NanoLund, Lund University, Box 118, S-221 00 Lund, Sweden.
ACS Appl Mater Interfaces. 2020 Apr 15;12(15):17845-17851. doi: 10.1021/acsami.0c00951. Epub 2020 Apr 2.
In this work, arrays of predominantly relaxed InGaN platelets with indium contents of up to 18%, free from dislocations and offering a smooth top -plane, are presented. The InGaN platelets are grown by metal-organic vapor phase epitaxy on a dome-like InGaN surface formed by chemical mechanical polishing of InGaN pyramids defined by 6 equivalent {101̅1} planes. The dome-like surface is flattened during growth, through the formation of bunched steps, which are terminated when reaching the inclined {101̅1} planes. The continued growth takes place on the flattened top -plane with single bilayer surface steps initiated at the six corners between the -plane and the inclined {101̅1} planes, leading to the formation of high-quality InGaN layers. The top -plane of the as-formed InGaN platelets can be used as a high-quality template for red micro light-emitting diodes.
在这项工作中，展示了主要为弛豫态的铟含量高达18%的氮化铟镓片阵列，这些片无位错且具有光滑的顶面。氮化铟镓片通过金属有机气相外延生长在由化学机械抛光由6个等效{101̅1}平面定义的氮化铟镓金字塔形成的圆顶状氮化铟镓表面上。在生长过程中，圆顶状表面通过形成成束台阶而变平，这些台阶在到达倾斜的{101̅1}平面时终止。持续生长在变平的顶面上进行，在该平面与倾斜的{101̅1}平面之间的六个角处开始出现单层表面台阶，从而形成高质量的氮化铟镓层。所形成的氮化铟镓片的顶面可用作红色微型发光二极管的高质量模板。
