Kim Min Je, Lee Myeongjae, Min Honggi, Kim Seunghan, Yang Jeehye, Kweon Hyukmin, Lee Wooseop, Kim Do Hwan, Choi Jong-Ho, Ryu Du Yeol, Kang Moon Sung, Kim BongSoo, Cho Jeong Ho
SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea.
Department of Chemistry, Korea University, Seoul, 02841, Republic of Korea.
Nat Commun. 2020 Mar 23;11(1):1520. doi: 10.1038/s41467-020-15181-4.
All-solution processing of large-area organic electronics requires multiple steps of patterning and stacking of various device components. Here, we report the fabrication of highly integrated arrays of polymer thin-film transistors and logic gates entirely through a series of solution processes. The fabrication is done using a three-dimensional crosslinker in tetrahedral geometry containing four photocrosslinkable azide moieties, referred to as 4Bx. 4Bx can be mixed with a variety of solution-processable electronic materials (polymer semiconductors, polymer insulators, and metal nanoparticles) and generate crosslinked network under exposure to UV. Fully crosslinked network film can be formed even at an unprecedentedly small loading, which enables preserving the inherent electrical and structural characteristics of host material. Because the crosslinked electronic component layers are strongly resistant to chemical solvents, micropatterning the layers at high resolution as well as stacking the layers on top of each other by series of solution processing steps is possible.
大面积有机电子器件的全溶液处理需要对各种器件组件进行多个步骤的图案化和堆叠。在此,我们报告了完全通过一系列溶液工艺制造的聚合物薄膜晶体管和逻辑门的高度集成阵列。该制造过程使用了一种四面体几何结构的三维交联剂,其中包含四个可光交联的叠氮基团,称为4Bx。4Bx可以与各种可溶液加工的电子材料(聚合物半导体、聚合物绝缘体和金属纳米颗粒)混合,并在紫外线照射下产生交联网络。即使在前所未有的低负载量下也能形成完全交联的网络薄膜,这使得主体材料的固有电学和结构特性得以保留。由于交联的电子组件层对化学溶剂具有很强的抗性,因此可以通过一系列溶液加工步骤对这些层进行高分辨率的微图案化以及相互堆叠。