Li Yuyin, Liu Zhengqi, Pan Pingping, Liu Xiaoshan, Fu Guolan, Liu Zhongmin, Luo Haimei, Liu Guiqiang
Jiangxi Key Laboratory of Nanomaterials and Sensors, School of Physics, Communication and Electronics, Jiangxi Normal University, Nanchang, 330022, China.
Nanoscale Res Lett. 2020 Apr 8;15(1):76. doi: 10.1186/s11671-020-03311-2.
Light trapping is an important performance of ultra-thin solar cells because it cannot only increase the optical absorption in the photoactive region but it also allows for the efficient absorption with very little materials. Semiconductor-nanoantenna has the ability to enhance light trapping and raise the transfer efficiency of solar energy. In this work, we present a solar absorber based on the gallium arsenide (GaAs) nanoantennas. Near-perfect light absorption (above 90%) is achieved in the wavelength which ranges from 468 to 2870 nm, showing an ultra-broadband and near-unity light trapping for the sun's radiation. A high short-circuit current density up to 61.947 mA/cm is obtained. Moreover, the solar absorber is with good structural stability and high temperature tolerance. These offer new perspectives for achieving ultra-compact efficient photovoltaic cells and thermal emitters.
光捕获是超薄太阳能电池的一项重要性能，因为它不仅可以增加光活性区域的光吸收，还能以极少的材料实现高效吸收。半导体纳米天线具有增强光捕获和提高太阳能转换效率的能力。在这项工作中，我们展示了一种基于砷化镓（GaAs）纳米天线的太阳能吸收器。在468至2870纳米的波长范围内实现了近完美的光吸收（超过90%），对太阳辐射显示出超宽带和近乎全光捕获。获得了高达61.947毫安/平方厘米的高短路电流密度。此外，该太阳能吸收器具有良好的结构稳定性和高温耐受性。这些为实现超紧凑高效光伏电池和热发射器提供了新的视角。
