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全耗尽单片有源微带传感器:创新设计概念的TCAD模拟研究

Fully Depleted Monolithic Active Microstrip Sensors: TCAD Simulation Study of an Innovative Design Concept.

作者信息

De Cilladi Lorenzo, Corradino Thomas, Dalla Betta Gian-Franco, Neubüser Coralie, Pancheri Lucio

机构信息

Dipartimento di Fisica, Università degli Studi di Torino, 10125 Torino, Italy.

Istituto Nazionale di Fisica Nucleare (INFN), Sezione di Torino, 10125 Torino, Italy.

出版信息

Sensors (Basel). 2021 Mar 11;21(6):1990. doi: 10.3390/s21061990.

Abstract

The paper presents the simulation studies of 10 μμm pitch microstrips on a fully depleted monolithic active CMOS technology and describes their potential to provide a new and cost-effective solution for particle tracking and timing applications. The Fully Depleted Monolithic Active Microstrip Sensors (FD-MAMS) described in this work, which are developed within the framework of the ARCADIA project, are compliant with commercial CMOS fabrication processes. A set of Technology Computer-Aided Design (TCAD) parametric simulations was performed in the perspective of an upcoming engineering production run with the aim of designing FD-MAMS, studying their electrical characteristics, and optimizing the sensor layout for enhanced performance in terms of low capacitance, fast charge collection, and low-power operation. A fine pitch of 10 μμm was chosen to provide high spatial resolution. This small pitch still allows readout electronics to be monolithically integrated in the inter-strip regions, enabling the segmentation of long strips and the implementation of distributed readout architectures. The effects of surface radiation damage expected for total ionizing doses of the order of 10 to 105 krad were also modeled in the simulations. The results of the simulations exhibit promising performance in terms of timing and low power consumption and motivate R&D efforts to further develop FD-MAMS; the results will be experimentally verified through measurements on the test structures that will be available from mid-2021.

摘要

本文介绍了基于全耗尽单片有源CMOS技术的10μm间距微带的模拟研究,并描述了其为粒子跟踪和定时应用提供新的经济高效解决方案的潜力。本文所述的全耗尽单片有源微带传感器(FD-MAMS)是在ARCADIA项目框架内开发的,符合商业CMOS制造工艺。为了即将进行的工程生产,进行了一组技术计算机辅助设计(TCAD)参数模拟,目的是设计FD-MAMS,研究其电气特性,并优化传感器布局,以在低电容、快速电荷收集和低功耗方面提高性能。选择10μm的精细间距以提供高空间分辨率。这种小间距仍然允许读出电子器件单片集成在条带间区域,从而实现长条带的分段和分布式读出架构的实现。模拟中还对总电离剂量约为10至105 krad时预期的表面辐射损伤效应进行了建模。模拟结果在定时和低功耗方面表现出有前景的性能,并推动了进一步开发FD-MAMS的研发工作;结果将通过对2021年年中可获得的测试结构进行测量进行实验验证。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a2d9/7998939/6e876f51147c/sensors-21-01990-g0A1.jpg

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