Shi Kaixi, Li Jinhua, Xiao Youcheng, Guo Liang, Chu Xueying, Zhai Yingjiao, Zhang Beilong, Lu Dongxiao, Rosei Federico
International Joint Research Center for Nanophotonics and Biophotonics, Nanophotonics and Biophotonics Key Laboratory of Jilin Province, School of Science, Changchun University of Science and Technology, Changchun 130022, China.
Centre Énergie Matériaux et Télécommunications, Institut National de la Recherche Scientifique, 1650 Boul. Lionel Boulet, Varennes, Quebec J3X 1S2, Canada.
ACS Appl Mater Interfaces. 2020 Jul 15;12(28):31382-31391. doi: 10.1021/acsami.0c05476. Epub 2020 Jul 2.
Various hybrid zero-dimensional/two-dimensional (0D/2D) systems have been developed to fabricate phototransistors with better performance compared to two-dimensional (2D) layered materials as well as broaden potential applications. Herein, we integrated environment-friendly InP@ZnS core-shell QDs with high efficiency of light absorption and light-emitting properties with bilayer MoS for the realization of 0D/2D mixed-dimensional phototransistors. Interdigitated (IDT) electrodes with Pt-patterned arrays, acting as light collectors as well as plasmonic resonators, can further enhance light harvesting from the InP@ZnS-MoS hybrid phototransistors, contributing to achieving a photoresponsivity as high as 1374 A·W. Moreover, thanks to the asymmetric Pt/MoS Schottky junction at the source/drain contact, a self-powered characteristic with an ultrafast speed of 21.5 μs was achieved, which is among the best performances for 2D layered material-based phototransistors. In terms of these features, we demonstrated the artificial synapse network with short-time plasticity based on the self-powered photodetection device. Our work reveals the great potential of 0D/2D hybrid phototransistors for high-response, ultrafast-speed, and self-powered photodetectors coupled with artificial neuromorphic function.
与二维（2D）层状材料相比，已经开发出各种混合零维/二维（0D/2D）系统来制造具有更好性能的光电晶体管，并拓宽潜在应用。在此，我们将具有高效光吸收和发光特性的环境友好型InP@ZnS核壳量子点与双层MoS集成，以实现0D/2D混合维度光电晶体管。具有Pt图案化阵列的叉指（IDT）电极，既作为光收集器又作为等离子体谐振器，可以进一步增强InP@ZnS-MoS混合光电晶体管的光捕获，有助于实现高达1374 A·W的光响应度。此外，由于源极/漏极接触处的不对称Pt/MoS肖特基结，实现了21.5 μs超快速度的自供电特性，这是基于二维层状材料的光电晶体管的最佳性能之一。基于这些特性，我们展示了基于自供电光探测器件的具有短时可塑性的人工突触网络。我们的工作揭示了0D/2D混合光电晶体管在高响应、超快速和自供电光电探测器以及人工神经形态功能方面的巨大潜力。
