Pesquera D, Khestanova E, Ghidini M, Zhang S, Rooney A P, Maccherozzi F, Riego P, Farokhipoor S, Kim J, Moya X, Vickers M E, Stelmashenko N A, Haigh S J, Dhesi S S, Mathur N D
Department of Materials Science, University of Cambridge, Cambridge, CB3 0FS, UK.
ITMO University, Saint Petersburg, 197101, Russia.
Nat Commun. 2020 Jun 24;11(1):3190. doi: 10.1038/s41467-020-16942-x.
Epitaxial films may be released from growth substrates and transferred to structurally and chemically incompatible substrates, but epitaxial films of transition metal perovskite oxides have not been transferred to electroactive substrates for voltage control of their myriad functional properties. Here we demonstrate good strain transmission at the incoherent interface between a strain-released film of epitaxially grown ferromagnetic LaSrMnO and an electroactive substrate of ferroelectric 0.68Pb(MgNb)O-0.32PbTiO in a different crystallographic orientation. Our strain-mediated magnetoelectric coupling compares well with respect to epitaxial heterostructures, where the epitaxy responsible for strong coupling can degrade film magnetization via strain and dislocations. Moreover, the electrical switching of magnetic anisotropy is repeatable and non-volatile. High-resolution magnetic vector maps reveal that micromagnetic behaviour is governed by electrically controlled strain and cracks in the film. Our demonstration should inspire others to control the physical/chemical properties in strain-released epitaxial oxide films by using electroactive substrates to impart strain via non-epitaxial interfaces.
外延薄膜可以从生长衬底上释放并转移到结构和化学性质不相容的衬底上,但过渡金属钙钛矿氧化物的外延薄膜尚未转移到电活性衬底上以对其众多功能特性进行电压控制。在此,我们展示了在具有不同晶体取向的外延生长铁磁LaSrMnO应变释放薄膜与铁电0.68Pb(MgNb)O-0.32PbTiO电活性衬底之间的非相干界面处良好的应变传递。我们的应变介导磁电耦合与外延异质结构相比表现良好,在外延异质结构中,负责强耦合的外延会通过应变和位错降低薄膜的磁化强度。此外,磁各向异性的电切换是可重复且非易失性的。高分辨率磁矢量图表明,微磁行为受薄膜中电控制应变和裂纹的支配。我们的展示应能激励其他人通过使用电活性衬底经由非外延界面施加应变来控制应变释放外延氧化物薄膜中的物理/化学性质。