Banerjee Soumya, Adhikari Ek, Sapkota Pitambar, Sebastian Amal, Ptasinska Sylwia
Radiation Laboratory, University of Notre Dame, Notre Dame, IN 46556, USA.
Department of Physics, University of Notre Dame, Notre Dame, IN 46556, USA.
Materials (Basel). 2020 Jun 30;13(13):2931. doi: 10.3390/ma13132931.
Atmospheric pressure plasma (APP) deposition techniques are useful today because of their simplicity and their time and cost savings, particularly for growth of oxide films. Among the oxide materials, titanium dioxide (TiO) has a wide range of applications in electronics, solar cells, and photocatalysis, which has made it an extremely popular research topic for decades. Here, we provide an overview of non-thermal APP deposition techniques for TiO thin film, some historical background, and some very recent findings and developments. First, we define non-thermal plasma, and then we describe the advantages of APP deposition. In addition, we explain the importance of TiO and then describe briefly the three deposition techniques used to date. We also compare the structural, electronic, and optical properties of TiO films deposited by different APP methods. Lastly, we examine the status of current research related to the effects of such deposition parameters as plasma power, feed gas, bias voltage, gas flow rate, and substrate temperature on the deposition rate, crystal phase, and other film properties. The examples given cover the most common APP deposition techniques for TiO growth to understand their advantages for specific applications. In addition, we discuss the important challenges that APP deposition is facing in this rapidly growing field.
由于其简单性以及节省时间和成本的特点，常压等离子体（APP）沉积技术如今很有用，尤其适用于氧化物薄膜的生长。在氧化物材料中，二氧化钛（TiO₂）在电子学、太阳能电池和光催化领域有广泛应用，这使其在数十年间一直是极其热门的研究课题。在此，我们概述了用于TiO₂薄膜的非热APP沉积技术、一些历史背景以及一些最新的发现和进展。首先，我们定义非热等离子体，然后描述APP沉积的优点。此外，我们解释TiO₂的重要性，接着简要介绍迄今使用的三种沉积技术。我们还比较了通过不同APP方法沉积的TiO₂薄膜的结构、电子和光学性质。最后，我们考察当前有关等离子体功率、进料气体、偏置电压、气体流速和衬底温度等沉积参数对沉积速率、晶相和其他薄膜性质影响的研究现状。所举例子涵盖了用于TiO₂生长的最常见APP沉积技术，以了解它们在特定应用中的优势。此外，我们讨论了APP沉积在这个快速发展的领域所面临的重要挑战。
