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在高强度激发光下测量的多相叶绿素a荧光上升。

The polyphasic chlorophyll a fluorescence rise measured under high intensity of exciting light.

作者信息

Lazár Dušan

机构信息

Palacký University, Faculty of Science, Department of Experimental Physics, Laboratory of Biophysics, tř. Svobody 26, 771 46 Olomouc, Czech Republic. Email.

出版信息

Funct Plant Biol. 2006 Feb;33(1):9-30. doi: 10.1071/FP05095.

DOI:10.1071/FP05095
PMID:32689211
Abstract

Chlorophyll a fluorescence rise caused by illumination of photosynthetic samples by high intensity of exciting light, the O-J-I-P (O-I-I-P) transient, is reviewed here. First, basic information about chlorophyll a fluorescence is given, followed by a description of instrumental set-ups, nomenclature of the transient, and samples used for the measurements. The review mainly focuses on the explanation of particular steps of the transient based on experimental and theoretical results, published since a last review on chlorophyll a fluorescence induction [Lazár D (1999) Biochimica et Biophysica Acta 1412, 1-28]. In addition to 'old' concepts (e.g. changes in redox states of electron acceptors of photosystem II (PSII), effect of the donor side of PSII, fluorescence quenching by oxidised plastoquinone pool), 'new' approaches (e.g. electric voltage across thylakoid membranes, electron transport through the inactive branch in PSII, recombinations between PSII electron acceptors and donors, electron transport reactions after PSII, light gradient within the sample) are reviewed. The K-step, usually detected after a high-temperature stress, and other steps appearing in the transient (the H and G steps) are also discussed. Finally, some applications of the transient are also mentioned.

摘要

本文综述了光合样品在高强度激发光照射下引起的叶绿素a荧光上升现象,即O-J-I-P(O-I-I-P)瞬变。首先,介绍了叶绿素a荧光的基本信息,接着描述了仪器设置、瞬变的命名以及用于测量的样品。本综述主要基于自上次关于叶绿素a荧光诱导的综述[拉扎尔·D(1999年),《生物化学与生物物理学报》1412卷,第1 - 28页]发表以来的实验和理论结果,重点解释瞬变的特定步骤。除了“旧”概念(例如光系统II(PSII)电子受体氧化还原状态的变化、PSII供体侧的影响、氧化质体醌库引起的荧光猝灭)外,还综述了“新”方法(例如类囊体膜上的跨膜电压、PSII中通过非活性支路的电子传输、PSII电子受体与供体之间的复合、PSII之后的电子传输反应、样品内的光梯度)。还讨论了通常在高温胁迫后检测到的K步骤以及瞬变中出现的其他步骤(H和G步骤)。最后,还提到了瞬变的一些应用。

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