半导体少层碲化钼中的光电导倍增
Photoconductivity Multiplication in Semiconducting Few-Layer MoTe.
作者信息
Zheng Wenhao, Bonn Mischa, Wang Hai I
机构信息
Max Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany.
出版信息
Nano Lett. 2020 Aug 12;20(8):5807-5813. doi: 10.1021/acs.nanolett.0c01693. Epub 2020 Jul 27.
Abstract
We report efficient photoconductivity multiplication in few-layer 2H-MoTe as a direct consequence of an efficient steplike carrier multiplication with near unity quantum yield and high carrier mobility (∼45 cm V s) in MoTe. This photoconductivity multiplication is quantified using ultrafast, excitation-wavelength-dependent photoconductivity measurements employing contact-free terahertz spectroscopy. We discuss the possible origins of efficient carrier multiplication in MoTe to guide future theoretical investigations. The combination of photoconductivity multiplication and the advantageous bandgap renders MoTe as a promising candidate for efficient optoelectronic devices.
摘要
我们报道了在少层2H-MoTe中实现了高效的光电导倍增，这是MoTe中具有近单位量子产率和高载流子迁移率（约45 cm² V⁻¹ s⁻¹）的高效阶梯状载流子倍增的直接结果。这种光电导倍增通过使用非接触太赫兹光谱的超快、与激发波长相关的光电导测量来量化。我们讨论了MoTe中高效载流子倍增的可能起源，以指导未来的理论研究。光电导倍增和有利的带隙相结合，使MoTe成为高效光电器件的有前途的候选材料。
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