Zhu Weigang, Spencer Austin P, Mukherjee Subhrangsu, Alzola Joaquin M, Sangwan Vinod K, Amsterdam Samuel H, Swick Steven M, Jones Leighton O, Heiber Michael C, Herzing Andrew A, Li Guoping, Stern Charlotte L, DeLongchamp Dean M, Kohlstedt Kevin L, Hersam Mark C, Schatz George C, Wasielewski Michael R, Chen Lin X, Facchetti Antonio, Marks Tobin J
Material Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, United States.
Chemical Sciences and Engineering Division, Argonne National Laboratory, Lemont, Illinois 60439, United States.
J Am Chem Soc. 2020 Aug 26;142(34):14532-14547. doi: 10.1021/jacs.0c05560. Epub 2020 Aug 12.
Emerging nonfullerene acceptors (NFAs) with crystalline domains enable high-performance bulk heterojunction (BHJ) solar cells. Thermal annealing is known to enhance the BHJ photoactive layer morphology and performance. However, the microscopic mechanism of annealing-induced performance enhancement is poorly understood in emerging NFAs, especially regarding competing factors. Here, optimized thermal annealing of model system ( = 2,2'-((2,2')-((12,13-bis(2-ethylhexyl)-3,9-diundecyl-12,13-dihydro-[1,2,5]thiadiazolo[3,4-]thieno[2″,3'':4',5']thieno[2',3':4,5]pyrrolo[3,2-g]thieno[2',3':4,5]-thieno[3,2-]indole-2,10-diyl)bis(methanylylidene))bis(5,6-difluoro-3-oxo-2,3-dihydro-1-indene-2,1-diylidene))dimalononitrile) decreases the open circuit voltage () but increases the short circuit current () and fill factor (FF) such that the resulting power conversion efficiency (PCE) increases from 14 to 15% in the ambient environment. Here we systematically investigate these thermal annealing effects through in-depth characterizations of carrier mobility, film morphology, charge photogeneration, and recombination using SCLC, GIXRD, AFM, XPS, NEXAFS, R-SoXS, TEM, STEM, fs/ns TA spectroscopy, 2DES, and impedance spectroscopy. Surprisingly, thermal annealing does not alter the film crystallinity, R-SoXS characteristic size scale, relative average phase purity, or TEM-imaged phase separation but rather facilitates migration to the BHJ film top surface, changes the / vertical phase separation and intermixing, and reduces the bottom surface roughness. While these morphology changes increase bimolecular recombination (BR) and lower the free charge (FC) yield, they also increase the average electron and hole mobility by at least 2-fold. Importantly, the increased μ dominates and underlies the increased FF and PCE. Single-crystal X-ray diffraction reveals that molecules cofacially pack via their end groups/cores, with the shortest π-π distance as close as 3.34 Å, clarifying out-of-plane π-face-on molecular orientation in the nanocrystalline BHJ domains. DFT analysis of crystals reveals hole/electron reorganization energies of as low as 160/150 meV, large intermolecular electronic coupling integrals of 12.1-37.9 meV rationalizing the 3D electron transport, and relatively high μ of 10 cm V s. Taken together, this work clarifies the richness of thermal annealing effects in high-efficiency NFA solar cells and tasks for future materials design.
具有结晶域的新型非富勒烯受体(NFA)可实现高性能体异质结(BHJ)太阳能电池。已知热退火可改善BHJ光活性层的形态和性能。然而,在新型NFA中,退火诱导性能增强的微观机制尚不清楚,尤其是关于竞争因素。在此,对模型体系( = 2,2'-((2,2')-((12,13-双(2-乙基己基)-3,9-二正十一烷基-12,13-二氢-[1,2,5]噻二唑并[3,4-]噻吩并[2″,3'':4',5']噻吩并[2',3':4,5]吡咯并[3,2-g]噻吩并[2',3':4,5]-噻吩并[3,2-]吲哚-2,10-二基)双(亚甲基))双(5,6-二氟-3-氧代-2,3-二氢-1-茚-2,1-二亚基))二丙二腈)进行优化热退火,在环境条件下,开路电压( )降低,但短路电流( )和填充因子(FF)增加,使得功率转换效率(PCE)从14%提高到15%。在此,我们通过使用SCLC、GIXRD、AFM、XPS、NEXAFS、R-SoXS、TEM、STEM、飞秒/纳秒TA光谱、二维电子光谱(2DES)和阻抗光谱对载流子迁移率、薄膜形态、电荷光生和复合进行深入表征,系统地研究了这些热退火效应。令人惊讶的是,热退火不会改变薄膜结晶度、R-SoXS特征尺寸尺度、相对平均相纯度或TEM成像的相分离,而是促进 迁移到BHJ薄膜顶面,改变 / 垂直相分离和混合,并降低底面粗糙度。虽然这些形态变化增加了双分子复合(BR)并降低了自由电荷(FC)产率,但它们也使平均电子和空穴迁移率至少提高了2倍。重要的是,增加的μ占主导地位并构成了FF和PCE增加的基础。单晶X射线衍射表明, 分子通过其端基/核心共面堆积,最短的π-π距离接近3.34 Å,阐明了纳米晶BHJ域中的面外π-面取向分子取向。对 晶体的密度泛函理论(DFT)分析表明,空穴/电子重组能低至160/150 meV,大的分子间电子耦合积分在12.1 - 37.9 meV之间,合理化了三维电子传输,以及相对较高的μ为10 cm V s。综上所述,这项工作阐明了高效NFA太阳能电池中热退火效应的丰富性以及未来材料设计的任务。