Ban Yijie, Zhang Yi, Tian Baohong, Jia Yanlin, Song Kexing, Li Xu, Zhou Meng, Liu Yong, Volinsky Alex A
School of Materials Science and Engineering, Henan University of Science and Technology, Luoyang 471023, China.
Provincial and Ministerial Co-Construction of Collaborative Innovation Center for Non-Ferrous Metal New Materials and Advanced Processing Technology, Luoyang 471023, China.
Materials (Basel). 2020 Jul 16;13(14):3186. doi: 10.3390/ma13143186.
Cu-Ni-Si alloys are widely used in lead frames and vacuum devices due to their high electrical conductivity and strength. In this paper, a Cu-Ni-Co-Si-Cr-(Ce) alloy was prepared by vacuum induction melting. Hot compression tests of the Cu-Ni-Co-Si-Cr and Cu-Ni-Co-Si-Cr-Ce alloys were carried out using a Gleeble-1500 simulator at 500-900 °C deformation temperatures and 0.001-10 s strain rates. The texture change was analyzed by electron backscatter diffraction. The <110> fiber component dominated the texture after compression, and the texture intensity was reduced during recrystallization. Moreover, the average misorientation angle φ for Cu-Ni-Co-Si-Cr-Ce (11°) was lower than that of Cu-Ni-Co-Si-Cr (16°) under the same conditions. Processing maps were developed to determine the optimal processing window. The microstructure and precipitates of the Cu-Ni-Co-Si-Cr and Cu-Ni-Co-Si-Cr-Ce alloys were also analyzed. The average grain size of the Cu-Ni-Co-Si-Cr-Ce alloy (48 μm) was finer than that of the Cu-Ni-Co-Si-Cr alloy (80 μm). The average size of precipitates in the Cu-Ni-Co-Si-Cr alloy was 73 nm, while that of the Cu-Ni-Co-Si-Cr-Ce alloy was 27 nm. The addition of Ce delayed the occurrence of dynamic recrystallization.
铜镍硅合金因其高导电性和强度而广泛应用于引线框架和真空器件中。本文通过真空感应熔炼制备了一种铜镍钴硅铬(铈)合金。使用Gleeble - 1500模拟器在500 - 900°C变形温度和0.001 - 10 s应变速率下对铜镍钴硅铬合金和铜镍钴硅铬铈合金进行了热压缩试验。通过电子背散射衍射分析织构变化。压缩后<110>纤维组分主导织构,且在再结晶过程中织构强度降低。此外,在相同条件下,铜镍钴硅铬铈合金的平均取向差角φ(11°)低于铜镍钴硅铬合金(16°)。绘制了加工图以确定最佳加工窗口。还分析了铜镍钴硅铬合金和铜镍钴硅铬铈合金的微观结构和析出相。铜镍钴硅铬铈合金的平均晶粒尺寸(48μm)比铜镍钴硅铬合金(80μm)更细。铜镍钴硅铬合金中析出相的平均尺寸为73nm,而铜镍钴硅铬铈合金中析出相的平均尺寸为27nm。铈的添加延迟了动态再结晶的发生。