Beaudette Chad A, Held Jacob T, Mkhoyan K Andre, Kortshagen Uwe R
Department of Mechanical Engineering, University of Minnesota Twin Cities, Minneapolis, Minnesota, United States.
Department of Chemical Engineering and Materials Science, University of Minnesota Twin Cities, Minneapolis, Minnesota, United States.
ACS Omega. 2020 Aug 20;5(34):21853-21861. doi: 10.1021/acsomega.0c02947. eCollection 2020 Sep 1.
Molybdenum disulfide (MoS) is being studied for a wide range of applications including lithium-ion batteries and hydrogen evolution reaction catalysts. In this paper, we present a single-step nonthermal plasma-enhanced chemical vapor deposition (PECVD) process for the production of two-dimensional MoS. This method provides an alternative route to established CVD and plasma synthesis routes. The approach presented here synthesizes films in only a few minutes using elemental sulfur (S) and molybdenum pentachloride (MoCl) as precursors. Deposition utilizes a nonthermal inductively coupled plasma reactor and temperatures around 500 °C. Film growth characteristics and nucleation are studied as a function of precursor concentrations, argon flow rate, plasma power, and deposition time. Few-layer two-dimensional (MoS) films were formed at low precursor concentrations. Films with nanoparticle-like features were formed when the precursor concentration was high. Noncontinuous nonstoichiometric films were found at low plasma power, while high plasma power led to continuous films with good stoichiometry. The vacancies and defects in these films may provide active sites for hydrogen evolution.
二硫化钼（MoS）正被广泛研究用于包括锂离子电池和析氢反应催化剂等众多应用领域。在本文中，我们展示了一种用于制备二维MoS的单步非热等离子体增强化学气相沉积（PECVD）工艺。该方法为已有的化学气相沉积（CVD）和等离子体合成路线提供了一条替代途径。这里介绍的方法仅使用元素硫（S）和五氯化钼（MoCl）作为前驱体，在几分钟内就能合成薄膜。沉积过程利用非热感应耦合等离子体反应器，温度约为500°C。研究了薄膜生长特性和成核情况与前驱体浓度、氩气流速、等离子体功率及沉积时间的关系。在前驱体浓度较低时形成了少层二维（MoS）薄膜。当前驱体浓度较高时，形成了具有纳米颗粒状特征的薄膜。在低等离子体功率下发现了不连续的非化学计量薄膜，而高等离子体功率则导致形成具有良好化学计量比的连续薄膜。这些薄膜中的空位和缺陷可能为析氢提供活性位点。
