Sidik Umar, Hattori Azusa N, Rakshit Rupali, Ramanathan Shriram, Tanaka Hidekazu
Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan.
Indian Institute of Science, CV Raman Rd, Bengaluru, Karnataka 560012, India.
ACS Appl Mater Interfaces. 2020 Dec 9;12(49):54955-54962. doi: 10.1021/acsami.0c15724. Epub 2020 Nov 26.
The electric-field-assisted hydrogenation and corresponding resistance modulation of NdNiO (NNO) thin-film resistors were systematically studied as a function of temperature and dc electric bias. Catalytic Pt electrodes serve as triple-phase boundaries for hydrogen incorporation into a perovskite lattice. A kinetic model describing the relationship between resistance modulation and proton diffusion was proposed by considering the effect of the electric field during hydrogenation. An electric field, in addition to thermal activation, is demonstrated to effectively control the proton distribution along its gradient with an efficiency of ∼22% at 2 × 10 V/m. The combination of an electric field and gas-phase annealing is shown to enable the elegant control of the diffusional doping of complex oxides.
系统研究了电场辅助氢化以及 NdNiO(NNO)薄膜电阻器相应的电阻调制随温度和直流电场偏置的变化。催化 Pt 电极作为氢掺入钙钛矿晶格的三相边界。通过考虑氢化过程中电场的影响,提出了一个描述电阻调制与质子扩散之间关系的动力学模型。除了热激活外,电场还被证明能以 2×10 V/m 的场强、约 22%的效率有效地控制质子沿其梯度的分布。电场与气相退火的结合被证明能够实现对复合氧化物扩散掺杂的精确控制。