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功能化外延石墨烯的计量适用性

Metrological Suitability of Functionalized Epitaxial Graphene.

作者信息

Rigosi Albert F, Kruskopf Mattias, Panna Alireza R, Payagala Shamith U, Jarrett Dean G, Newell David B, Elmquist Randolph E

机构信息

National Institute of Standards and Technology, 100 Bureau Drive, Stop 8171, Gaithersburg, MD, 20899, USA.

University of Maryland, Joint Quantum Institute, College Park, MD, 20742, USA.

出版信息

IEEE Trans Instrum Meas. 2020;1. doi: 10.1109/CPEM49742.2020.9191783.

DOI:10.1109/CPEM49742.2020.9191783
PMID:33335332
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7739545/
Abstract

This work presents one solution for long-term storage of epitaxial graphene (EG) in air, namely through the functionalization of millimeter-scale devices with chromium tricarbonyl - Cr(CO). The carrier density may be tuned reproducibly by annealing below 400 K due to the presence of Cr(CO). All tuning is easily reversible with exposure to air, with the idle, in-air, carrier density always being close to the Dirac point. Precision measurements in the quantum Hall regime indicate no detrimental effects from the treatment, validating the pursuit of developing air-stable EG-based QHR devices.

摘要

这项工作提出了一种在外延石墨烯(EG)在空气中长期存储的解决方案,即通过用三羰基铬-Cr(CO)对毫米级器件进行功能化。由于Cr(CO)的存在,通过在400 K以下退火可以可重复地调节载流子密度。所有调节在暴露于空气时都很容易逆转,闲置时在空气中的载流子密度始终接近狄拉克点。量子霍尔 regime中的精确测量表明该处理没有有害影响,验证了开发基于空气稳定的EG的QHR器件的追求。

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本文引用的文献

1
Graphene Devices for Tabletop and High-Current Quantized Hall Resistance Standards.用于桌面型和大电流量子化霍尔电阻标准的石墨烯器件。
IEEE Trans Instrum Meas. 2018;68. doi: 10.1109/TIM.2018.2882958.
2
Gateless and reversible carrier density tunability in epitaxial graphene devices functionalized with chromium tricarbonyl.用三羰基铬功能化的外延石墨烯器件中无栅且可逆的载流子密度可调性。
Carbon N Y. 2019;142. doi: 10.1016/j.carbon.2018.10.085.
3
Confocal laser scanning microscopy for rapid optical characterization of graphene.用于石墨烯快速光学表征的共聚焦激光扫描显微镜。
Commun Phys. 2018;1. doi: 10.1038/s42005-018-0084-6.
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Epitaxial graphene for quantum resistance metrology.用于量子电阻计量的外延石墨烯。
Metrologia. 2018;55. doi: 10.1088/1681-7575/aacd23.
5
Uniform doping of graphene close to the Dirac point by polymer-assisted assembly of molecular dopants.通过聚合物辅助组装分子掺杂剂,在接近狄拉克点的位置对石墨烯进行均匀掺杂。
Nat Commun. 2018 Sep 27;9(1):3956. doi: 10.1038/s41467-018-06352-5.
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Electrical Stabilization of Surface Resistivity in Epitaxial Graphene Systems by Amorphous Boron Nitride Encapsulation.通过非晶态氮化硼封装实现外延石墨烯系统表面电阻率的电稳定化。
ACS Omega. 2017;2(5):2326-2332. doi: 10.1021/acsomega.7b00341. Epub 2017 May 25.
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