美国国家标准与技术研究院（NIST）石墨烯与日本产业技术综合研究所（AIST）砷化镓量子霍尔器件的比较。
Comparison between NIST Graphene and AIST GaAs Quantized Hall Devices.
作者信息
Oe Takehiko, Rigosi Albert F, Kruskopf Mattias, Wu Bi-Yi, Lee Hsin-Yen, Yang Yanfei, Elmquist Randolph E, Kaneko Nobu-Hisa, Jarrett Dean G
机构信息
National Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology, Tsukuba 305-8563, Japan.
National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.
出版信息
IEEE Trans Instrum Meas. 2019;0. doi: 10.1109/tim.2019.2930436.
Several graphene quantized Hall resistance (QHR) devices manufactured at the National Institute of Standards and Technology (NIST) were compared to GaAs QHR devices and a 100 Ω standard resistor at the National Institute for Advanced Industrial Science and Technology (AIST). Measurements of the 100 Ω resistor with the graphene QHR devices agreed within 5 nΩ/Ω of the values for the 100 Ω resistor obtained through GaAs measurements. The electron density of the graphene devices was adjusted at AIST to restore device properties such that operation was possible at low magnetic flux densities of 4 T to 6 T. This adjustment was accomplished with a functionalization method utilized at NIST, allowing for consistent tunability of the graphene QHR devices with simple annealing. Such a method replaces older and less predictable methods for adjusting graphene for metrological suitability. The milestone results demonstrate the ease with which graphene can be used to make resistance comparison measurements among many National Metrology Institutes.
美国国家标准与技术研究院（NIST）制造的多个石墨烯量子化霍尔电阻（QHR）器件与日本产业技术综合研究所（AIST）的砷化镓QHR器件以及一个100Ω标准电阻进行了比较。用石墨烯QHR器件对100Ω电阻的测量结果与通过砷化镓测量获得的100Ω电阻值在5 nΩ/Ω范围内一致。AIST对石墨烯器件的电子密度进行了调整，以恢复器件性能，从而使其能够在4 T至6 T的低磁通密度下运行。这种调整是通过NIST使用的一种功能化方法完成的，通过简单退火即可实现石墨烯QHR器件的一致可调性。这种方法取代了用于调整石墨烯以满足计量适用性的旧的且不太可预测的方法。这些具有里程碑意义的结果表明，使用石墨烯在多个国家计量机构之间进行电阻比较测量是多么容易。
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