Bodlos Wolfgang Rao, Mattiello Sara, Perinot Andrea, Gigli Lara, Demitri Nicola, Beverina Luca, Caironi Mario, Resel Roland
Institute of Solid State Physics, Graz University of Technology, Petersgasse 16, 8010 Graz, Austria.
Department of Materials Science, Università di Milano-Bicocca, Via Cozzi 55, 20125, Milan, Italy.
Cryst Growth Des. 2021 Jan 6;21(1):325-332. doi: 10.1021/acs.cgd.0c01157. Epub 2020 Nov 24.
The asymmetric n-type Ph-BTBT-C derivative 2-decyl-7-phenyl-[1]benzothieno[3,2-][1]benzothiophene ,,','-tetraoxide is structurally investigated in the thin film regime. After film preparation by spin coating and physical vapor deposition, a rather disordered structure is observed, with a strong change of its internal degree of order upon heating. At 95 °C, a transition into a layered structure of upright standing molecules without any in-plane order appears, and at 135 °C, crystallization takes place. This phase information is combined with surface morphological studies and charge carrier mobility measurements to describe the structure and thin film transistor applicability of this molecule.
对不对称n型苯基苯并噻吩并噻吩(Ph-BTBT-C)衍生物2-癸基-7-苯基-[1]苯并噻吩并[3,2-b][1]苯并噻吩四氧化物在薄膜状态下进行了结构研究。通过旋涂和物理气相沉积制备薄膜后,观察到一种相当无序的结构,加热时其内部有序度发生了强烈变化。在95°C时,转变为直立分子的层状结构,没有任何面内有序,在135°C时发生结晶。将该相信息与表面形态研究和载流子迁移率测量相结合,以描述该分子的结构和薄膜晶体管适用性。