Gismatulin Andrei A, Kamaev Gennadiy N, Kruchinin Vladimir N, Gritsenko Vladimir A, Orlov Oleg M, Chin Albert
Rzhanov Institute of Semiconductor Physics. Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia.
Novosibirsk State University, 2 Pirogov Street, Novosobirsk, Russia, 630090.
Sci Rep. 2021 Jan 28;11(1):2417. doi: 10.1038/s41598-021-82159-7.
Nonstoichiometric silicon nitride SiN is a promising material for developing a new generation of high-speed, reliable flash memory device based on the resistive effect. The advantage of silicon nitride over other dielectrics is its compatibility with the silicon technology. In the present work, a silicon nitride-based memristor deposited by the plasma-enhanced chemical vapor deposition method was studied. To develop a memristor based on silicon nitride, it is necessary to understand the charge transport mechanisms in all states. In the present work, it was established that the charge transport in high-resistance states is not described by the Frenkel effect model of Coulomb isolated trap ionization, Hill-Adachi model of overlapping Coulomb potentials, Makram-Ebeid and Lannoo model of multiphonon isolated trap ionization, Nasyrov-Gritsenko model of phonon-assisted tunneling between traps, Shklovskii-Efros percolation model, Schottky model and the thermally assisted tunneling mechanisms. It is established that, in the initial state, low-resistance state, intermediate-resistance state and high-resistance state, the charge transport in the forming-free SiN-based memristor is described by the space charge limited current model. The trap parameters responsible for the charge transport in various memristor states are determined.
非化学计量比的氮化硅（SiN）是一种很有前景的材料，可用于基于电阻效应开发新一代高速、可靠的闪存器件。氮化硅相对于其他电介质的优势在于其与硅技术的兼容性。在本工作中，对通过等离子体增强化学气相沉积法沉积的基于氮化硅的忆阻器进行了研究。为了开发基于氮化硅的忆阻器，有必要了解所有状态下的电荷传输机制。在本工作中，已确定高电阻状态下的电荷传输不能用库仑孤立陷阱电离的弗伦克尔效应模型、重叠库仑势的希尔 - 足立模型、多声子孤立陷阱电离的马克拉姆 - 埃贝德和拉诺模型、陷阱间声子辅助隧穿的纳西罗夫 - 格里申科模型、什克洛夫斯基 - 埃弗罗斯渗流模型、肖特基模型以及热辅助隧穿机制来描述。已确定，在初始状态、低电阻状态、中间电阻状态和高电阻状态下，无形成过程的基于SiN的忆阻器中的电荷传输由空间电荷限制电流模型描述。确定了负责各种忆阻器状态下电荷传输的陷阱参数。
