Yen Te Jui, Gismatulin Andrei, Volodin Vladimir, Gritsenko Vladimir, Chin Albert
Department of Electronics Engineering, National Chiao Tung University, Hsinchu, 300, Taiwan.
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia.
Sci Rep. 2019 Apr 16;9(1):6144. doi: 10.1038/s41598-019-42706-9.
Traditional Resistive Random Access Memory (RRAM) is a metal-insulator-metal (MIM) structure, in which metal oxide is usually used as an insulator. The charge transport mechanism of traditional RRAM is attributed to a metallic filament inside the RRAM. In this paper, we demonstrated a novel RRAM device with no metal inside. The N-Si/SiO/P-Si combination forms a NIP diode structure that is different from traditional MIM RRAM. A large high-resistance/low-resistance window of 1.9 × 10 was measured at room temperature. A favorable retention memory window of 1.2 × 10 was attained for 10 s at 85 °C. The charge transport mechanism of virgin, high- and low-resistance states can be well modeled by the single Shklovskii-Efros percolation mechanism rather than the charge transport in metallic filament. X-ray photoelectron spectroscopy demonstrated that the value of x in SiO was 0.62, which provided sufficient oxygen vacancies for set/reset RRAM functions.
传统电阻式随机存取存储器（RRAM）是一种金属-绝缘体-金属（MIM）结构，其中金属氧化物通常用作绝缘体。传统RRAM的电荷传输机制归因于RRAM内部的金属细丝。在本文中，我们展示了一种内部无金属的新型RRAM器件。N-Si/SiO/P-Si组合形成了一种不同于传统MIM RRAM的NIP二极管结构。在室温下测量到1.9×10的大高阻/低阻窗口。在85°C下10秒内获得了1.2×10的良好保持记忆窗口。原始、高阻和低阻状态的电荷传输机制可以通过单一的什克洛夫斯基-埃弗罗斯渗流机制很好地建模，而不是金属细丝中的电荷传输。X射线光电子能谱表明SiO中x的值为0.62，这为设置/重置RRAM功能提供了足够的氧空位。
