Department of Prosthodontics, Peking University School and Hospital of Stomatology, National Clinical Research Center for Oral Diseases, National Engineering Laboratory for Digital and Material Technology of Stomatology, Beijing Key Laboratory of Digital Stomatology, Beijing 100081, PR China.
Department of Stomatology, Peking University Third Hospital, Beijing 100191, PR China.
Mater Sci Eng C Mater Biol Appl. 2021 Jan;120:111633. doi: 10.1016/j.msec.2020.111633. Epub 2020 Oct 16.
As an efficient strategy for the modification of material surfaces, cold atmospheric plasma (CAP) has been used in dentistry to improve hard and soft tissue integration of dental implant materials. We previously found the Streptococcus mutans growth was inhibited on the surface of zirconia implant abutment after a 60-second helium cold atmospheric plasma treatment. However, the mechanism of bacterial growth inhibition on CAP-treated zirconia has not been fully understood. The duration of bacterial inhibition effectiveness on CAP-treated zirconia has also been insufficiently examined. In this work, we assume that reactive oxygen species (ROS) are the primary cause of bacterial inhibition on CAP-treated zirconia. The ROS staining and an ROS scavenger were utilized to evaluate the bacterial intracellular ROS level, and to determine the role of ROS in bacterial growth inhibition when seeded on CAP-treated zirconia. The time-dependent effectiveness of CAP treatment was determined by changes in surface characteristics and antibacterial efficacy of zirconia with different storage times after CAP treatment. This study confirmed that the presence of reactive oxygen species on the zirconia surface after CAP treatment inhibits the growth of Streptococcus mutans on the material surface. Although the antibacterial efficacy of the 60-second CAP-treated zirconia decreased over time, there were fewer bacteria on the treated surface than those on the untreated surface after 14 days.
作为一种对材料表面进行改性的有效策略，冷等离子体（CAP）已被用于牙科领域，以改善牙科植入物材料的硬组织和软组织整合。我们之前发现，经过 60 秒氦气冷等离子体处理后，变形链球菌在氧化锆种植体基台上的生长受到抑制。然而，CAP 处理的氧化锆抑制细菌生长的机制尚未完全阐明。CAP 处理的氧化锆对细菌抑制作用的持续时间也不够充分。在这项工作中，我们假设活性氧（ROS）是 CAP 处理的氧化锆抑制细菌生长的主要原因。我们利用活性氧染色和活性氧清除剂来评估细菌细胞内的 ROS 水平，并确定 ROS 在 CAP 处理的氧化锆上接种细菌时对细菌生长抑制的作用。通过改变 CAP 处理后不同储存时间的氧化锆的表面特性和抗菌效果，确定 CAP 处理的时变有效性。本研究证实，CAP 处理后氧化锆表面存在的活性氧物质抑制了材料表面变形链球菌的生长。尽管经过 60 秒 CAP 处理的氧化锆的抗菌效果随时间推移而降低，但在 14 天后，处理表面的细菌数量仍少于未处理表面的细菌数量。
