Organoselenium Precursors for Atomic Layer Deposition.

Organoselenium compounds with perspective application as Se precursors for atomic layer deposition have been reviewed. The originally limited portfolio of available Se precursors such as HSe and diethyl(di)selenide has recently been extended by bis(trialkylsilyl)selenides, bis(trialkylstannyl)selenides, cyclic selenides, and tetrakis(,-dimethyldithiocarbamate)selenium. Their structural aspects, property tuning, fundamental properties, and preparations are discussed. It turned out that symmetric four- and six-membered cyclic silyl selenides possess well-balanced reactivity/stability, facile and cost-effective synthesis starting from inexpensive and readily available chlorosilanes, improved resistance toward air and moisture, easy handling, sufficient volatility, thermal resistance, and complete gas-to-solid phase exchange reaction with MoCl, affording MoSe nanostructures. These properties make them the most promising Se precursor developed for atomic layer deposition so far.