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自旋热力学熵驱动的锗锰碲中的反常热电势和高热电势

Anomalous Thermopower and High in GeMnTe Driven by Spin's Thermodynamic Entropy.

作者信息

Duan Sichen, Yin Yinong, Liu Guo-Qiang, Man Na, Cai Jianfeng, Tan Xiaojian, Guo Kai, Yang Xinxin, Jiang Jun

机构信息

Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Science, Ningbo 315201, China.

School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China.

出版信息

Research (Wash D C). 2021 Mar 11;2021:1949070. doi: 10.34133/2021/1949070. eCollection 2021.

Abstract

Na CoO was known 20 years ago as a unique example in which spin entropy dominates the thermoelectric behavior. Hitherto, however, little has been learned about how to manipulate the spin degree of freedom in thermoelectrics. Here, we report the enhanced thermoelectric performance of GeMnTe by controlling the spin's thermodynamic entropy. The anomalously large thermopower of GeMnTe is demonstrated to originate from the disordering of spin orientation under finite temperature. Based on the careful analysis of Heisenberg model, it is indicated that the spin-system entropy can be tuned by modifying the hybridization between Te- and Mn- orbitals. As a consequent strategy, Se doping enlarges the thermopower effectively, while neither carrier concentration nor band gap is affected. The measurement of magnetic susceptibility provides a solid evidence for the inherent relationship between the spin's thermodynamic entropy and thermopower. By further introducing Bi doing, the maximum in GeBiMnTeSe reaches 1.4 at 840 K, which is 45% higher than the previous report of Bi-doped GeMnTe. This work reveals the high thermoelectric performance of GeMnTe and also provides an insightful understanding of the spin degree of freedom in thermoelectrics.

摘要

20年前,NaCoO就被认为是自旋熵主导热电行为的一个独特例子。然而,迄今为止,关于如何在热电材料中操纵自旋自由度,人们了解得还很少。在此,我们报告了通过控制自旋的热力学熵提高了GeMnTe的热电性能。GeMnTe异常大的热电势被证明源于有限温度下自旋取向的无序化。基于对海森堡模型的仔细分析,表明可以通过改变Te和Mn轨道之间的杂化来调节自旋系统的熵。作为一种相应的策略,Se掺杂有效地增大了热电势,而载流子浓度和带隙均未受影响。磁化率测量为自旋的热力学熵与热电势之间的内在关系提供了确凿证据。通过进一步引入Bi掺杂,GeBiMnTeSe在840 K时的最大值达到1.4,比之前报道的Bi掺杂GeMnTe高出45%。这项工作揭示了GeMnTe的高热电性能,也为热电材料中的自旋自由度提供了深刻的理解。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3fc2/7980773/b3e570a88ace/RESEARCH2021-1949070.001.jpg

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