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使用同步辐射硬X射线光刻技术制造倾斜亚微米级结构。

Fabrication of Oblique Submicron-Scale Structures Using Synchrotron Hard X-ray Lithography.

作者信息

Kim Kanghyun, Park Kyungjin, Nam Hyoryung, Kim Geon Hwee, Hong Seong Kyung, Kim Suhyeon, Woo Hyeonsu, Yoon Seungbin, Kim Jong Hyun, Lim Geunbae

机构信息

Department of Mechanical Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, Gyeongbuk 37673, Korea.

School of Interdisciplinary Bioscience and Bioengineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, Gyeongbuk 37673, Korea.

出版信息

Polymers (Basel). 2021 Mar 26;13(7):1045. doi: 10.3390/polym13071045.

DOI:10.3390/polym13071045
PMID:33810563
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8037242/
Abstract

Oblique submicron-scale structures are used in various aspects of research, such as the directional characteristics of dry adhesives and wettability. Although deposition, etching, and lithography techniques are applied to fabricate oblique submicron-scale structures, these approaches have the problem of the controllability or throughput of the structures. Here, we propose a simple X-ray-lithography method, which can control the oblique angle of submicron-scale structures with areas on the centimeter scale. An X-ray mask was fabricated by gold film deposition on slanted structures. Using this mask, oblique ZEP520A photoresist structures with slopes of 20° and 10° and widths of 510 nm and 345 nm were fabricated by oblique X-ray exposure, and the possibility of polydimethylsiloxane (PDMS) molding was also confirmed. In addition, through double exposure with submicron- and micron-scale X-ray masks, dotted-line patterns were produced as an example of multiscale patterning.

摘要

倾斜的亚微米级结构被用于研究的各个方面,如干粘合剂的方向特性和润湿性。尽管沉积、蚀刻和光刻技术被应用于制造倾斜的亚微米级结构,但这些方法存在结构可控性或产量的问题。在此,我们提出一种简单的X射线光刻方法,它可以控制厘米级区域的亚微米级结构的倾斜角度。通过在倾斜结构上沉积金膜来制造X射线掩模。使用该掩模,通过倾斜X射线曝光制造了倾斜角度为20°和10°、宽度为510 nm和345 nm的ZEP520A光刻胶倾斜结构,并且还证实了聚二甲基硅氧烷(PDMS)成型的可能性。此外,通过使用亚微米级和微米级X射线掩模进行双重曝光,作为多尺度图案化的一个例子,制作出了虚线图案。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1a30/8037242/aa3ca2ed1c69/polymers-13-01045-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1a30/8037242/0b6cc09fca26/polymers-13-01045-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1a30/8037242/a1e86c783ce7/polymers-13-01045-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1a30/8037242/7f2a9568df21/polymers-13-01045-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1a30/8037242/7f101e616710/polymers-13-01045-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1a30/8037242/528194e7b067/polymers-13-01045-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1a30/8037242/cf66e0f5afde/polymers-13-01045-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1a30/8037242/694a8fd61c3f/polymers-13-01045-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1a30/8037242/5843bbffa2c5/polymers-13-01045-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1a30/8037242/aa3ca2ed1c69/polymers-13-01045-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1a30/8037242/0b6cc09fca26/polymers-13-01045-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1a30/8037242/a1e86c783ce7/polymers-13-01045-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1a30/8037242/7f2a9568df21/polymers-13-01045-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1a30/8037242/7f101e616710/polymers-13-01045-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1a30/8037242/528194e7b067/polymers-13-01045-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1a30/8037242/cf66e0f5afde/polymers-13-01045-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1a30/8037242/694a8fd61c3f/polymers-13-01045-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1a30/8037242/5843bbffa2c5/polymers-13-01045-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1a30/8037242/aa3ca2ed1c69/polymers-13-01045-g009.jpg

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