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基于AB堆叠纳米片的六方氮化硼。

AB-stacked nanosheet-based hexagonal boron nitride.

作者信息

Lee Jae Kap, Kim Jin Gyu, Hembram K P S S, Yu Seunggun, Lee Sang Gil

机构信息

Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul, 02792, South Korea.

Division of Electron Microscopic Research, Korea Basic Science Institute, Daejeon, 34133, Republic of Korea.

出版信息

Acta Crystallogr B Struct Sci Cryst Eng Mater. 2021 Apr 1;77(Pt 2):260-265. doi: 10.1107/S2052520621000317. Epub 2021 Mar 17.

Abstract

Hexagonal boron nitride (h-BN) has been generally interpreted as having an AA stacking sequence. Evidence is presented in this article indicating that typical commercial h-BN platelets (∼10-500 nm in thickness) exhibit stacks of parallel nanosheets (∼10 nm in thickness) predominantly in the AB sequence. The AB-stacked nanosheet occurs as a metastable phase of h-BN resulting from the preferred texture and lateral growth of armchair (110) planes. It appears as an independent nanosheet or unit for h-BN platelets. The analysis is supported by simulation of thin AB films (2-20 layers), which explains the unique X-ray diffraction pattern of h-BN. With this analysis and the role of pressure in commercial high-pressure high-temperature sintering (driving nucleation and parallelizing the in-plane crystalline growth of the nuclei), a growth mechanism is proposed for 2D h-BN (on a substrate) as `substrate-induced 2D growth', where the substrate plays the role of pressure.

摘要

六方氮化硼(h-BN)通常被解释为具有AA堆积序列。本文提供的证据表明,典型的商业h-BN薄片(厚度约为10 - 500纳米)主要呈现AB序列的平行纳米片堆叠(厚度约为10纳米)。AB堆叠的纳米片是h-BN的亚稳相,由扶手椅型(110)平面的择优织构和横向生长产生。它表现为h-BN薄片的独立纳米片或单元。对薄AB膜(2 - 20层)的模拟支持了该分析,这解释了h-BN独特的X射线衍射图案。基于此分析以及压力在商业高压高温烧结中的作用(驱动成核并使核的面内晶体生长平行化),提出了二维h-BN(在衬底上)的生长机制为“衬底诱导二维生长”,其中衬底起到压力的作用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a246/8040095/70037a1268c7/b-77-00260-fig1.jpg

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