Lee Jae Kap, Kim Jin Gyu, Hembram K P S S, Yu Seunggun, Lee Sang Gil
Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul, 02792, South Korea.
Division of Electron Microscopic Research, Korea Basic Science Institute, Daejeon, 34133, Republic of Korea.
Acta Crystallogr B Struct Sci Cryst Eng Mater. 2021 Apr 1;77(Pt 2):260-265. doi: 10.1107/S2052520621000317. Epub 2021 Mar 17.
Hexagonal boron nitride (h-BN) has been generally interpreted as having an AA stacking sequence. Evidence is presented in this article indicating that typical commercial h-BN platelets (∼10-500 nm in thickness) exhibit stacks of parallel nanosheets (∼10 nm in thickness) predominantly in the AB sequence. The AB-stacked nanosheet occurs as a metastable phase of h-BN resulting from the preferred texture and lateral growth of armchair (110) planes. It appears as an independent nanosheet or unit for h-BN platelets. The analysis is supported by simulation of thin AB films (2-20 layers), which explains the unique X-ray diffraction pattern of h-BN. With this analysis and the role of pressure in commercial high-pressure high-temperature sintering (driving nucleation and parallelizing the in-plane crystalline growth of the nuclei), a growth mechanism is proposed for 2D h-BN (on a substrate) as `substrate-induced 2D growth', where the substrate plays the role of pressure.
六方氮化硼(h-BN)通常被解释为具有AA堆积序列。本文提供的证据表明,典型的商业h-BN薄片(厚度约为10 - 500纳米)主要呈现AB序列的平行纳米片堆叠(厚度约为10纳米)。AB堆叠的纳米片是h-BN的亚稳相,由扶手椅型(110)平面的择优织构和横向生长产生。它表现为h-BN薄片的独立纳米片或单元。对薄AB膜(2 - 20层)的模拟支持了该分析,这解释了h-BN独特的X射线衍射图案。基于此分析以及压力在商业高压高温烧结中的作用(驱动成核并使核的面内晶体生长平行化),提出了二维h-BN(在衬底上)的生长机制为“衬底诱导二维生长”,其中衬底起到压力的作用。