Zhukov A E, Kryzhanovskaya N V, Moiseev E I, Maximov M V
Laboratory of quantum optoelectronics, National Research University Higher School of Economics, Kantemirovskaya 3A, St. Petersburg, 194100, Russia.
Nanophotonics laboratory, Alferov University, Khlopina 8/3, St. Petersburg, 194021, Russia.
Light Sci Appl. 2021 Apr 15;10(1):80. doi: 10.1038/s41377-021-00525-6.
The subject of this paper is microlasers with the emission spectra determined by the whispering gallery modes. Owing to the total internal reflection of light on the sidewalls, a high Q-factor is achieved until the diameter is comparable to the wavelength. The light emission predominantly occurs in the plane of the structure, which facilitates the microlaser integration with other elements. We focus on microdisk lasers with various types of the In(Ga)As quantum dots (QDs). Deep localization of charge carriers in spatially separated regions suppresses the lateral diffusion and makes it possible to overcome the undesirable effect of non-radiative recombination in deep mesas. Thus, using conventional epitaxial structures and relatively simple post-growth processing methods, it is possible to realize small microlasers capable of operating without temperature stabilization at elevated temperatures. The low sensitivity of QDs to epitaxial and manufacturing defects allows fabricating microlasers using III-V heterostructures grown on silicon.
本文的主题是发射光谱由回音壁模式决定的微激光器。由于光在侧壁上的全内反射，在直径与波长可比之前可实现高Q因子。光发射主要发生在结构平面内，这有利于微激光器与其他元件集成。我们专注于具有各种类型In（Ga）As量子点（QD）的微盘激光器。电荷载流子在空间分离区域的深度局域化抑制了横向扩散，并使得克服深台面中非辐射复合的不良影响成为可能。因此，使用传统的外延结构和相对简单的生长后处理方法，就有可能实现能够在高温下无需温度稳定即可工作的小型微激光器。量子点对外延和制造缺陷的低敏感性使得可以使用在硅上生长的III-V族异质结构来制造微激光器。
