Wan Yating, Jung Daehwan, Norman Justin, Shang Chen, MacFarlane Ian, Li Qiang, Kennedy M J, Gossard Arthur C, Lau Kei May, Bowers John E
Opt Express. 2017 Oct 30;25(22):26853-26860. doi: 10.1364/OE.25.026853.
We report statistical comparisons of lasing characteristics in InAs quantum dot (QD) micro-rings directly grown on on-axis (001) GaP/Si and V-groove (001) Si substrates. CW thresholds as low as 3 mA and high temperature operation exceeding 80 °C were simultaneously achieved on the GaP/Si template template with an outer-ring radius of 50 µm and a ring width of 4 μm, while a sub-milliamp threshold of 0.6 mA was demonstrated on the V-groove Si template with a smaller cavity size of 5-μm outer-ring radius and 3-μm ring width. Evaluations were also made with devices fabricated simultaneously on native GaAs substrates over a significant sampling analysis. The overall assessment spotlights compelling insights in exploring the optimum epitaxial scheme for low-threshold lasing on industry standard Si substrates.
我们报告了在直接生长在同轴（001）GaP/Si和V型槽（001）Si衬底上的InAs量子点（QD）微环中激光特性的统计比较。在外环半径为50 µm、环宽为4 µm的GaP/Si模板上，同时实现了低至3 mA的连续波阈值和超过80°C的高温运行，而在外环半径为5 µm、环宽为3 µm的较小腔尺寸的V型槽Si模板上，展示了0.6 mA的亚毫安阈值。还通过在原生GaAs衬底上同时制造的器件进行了大量采样分析评估。总体评估突出了在探索工业标准Si衬底上低阈值激光的最佳外延方案方面的引人注目的见解。
