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小于5纳米的单晶有机p-n异质结。

Sub-5 nm single crystalline organic p-n heterojunctions.

作者信息

Xiao Mingchao, Liu Jie, Liu Chuan, Han Guangchao, Shi Yanjun, Li Chunlei, Zhang Xi, Hu Yuanyuan, Liu Zitong, Gao Xike, Cai Zhengxu, Liu Ji, Yi Yuanping, Wang Shuai, Wang Dong, Hu Wenping, Liu Yunqi, Sirringhaus Henning, Jiang Lang

机构信息

Beijing National Laboratory for Molecular Sciences, Institute of Chemistry Chinese Academy of Sciences, Beijing, China.

Key laboratory of Material Chemistry for Energy Conversion and Storage, Ministry of Education, School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology, Wuhan, China.

出版信息

Nat Commun. 2021 May 13;12(1):2774. doi: 10.1038/s41467-021-23066-3.

DOI:10.1038/s41467-021-23066-3
PMID:33986296
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8119440/
Abstract

The cornerstones of emerging high-performance organic photovoltaic devices are bulk heterojunctions, which usually contain both structure disorders and bicontinuous interpenetrating grain boundaries with interfacial defects. This feature complicates fundamental understanding of their working mechanism. Highly-ordered crystalline organic p-n heterojunctions with well-defined interface and tailored layer thickness, are highly desirable to understand the nature of organic heterojunctions. However, direct growth of such a crystalline organic p-n heterojunction remains a huge challenge. In this work, we report a design rationale to fabricate monolayer molecular crystals based p-n heterojunctions. In an organic field-effect transistor configuration, we achieved a well-balanced ambipolar charge transport, comparable to single component monolayer molecular crystals devices, demonstrating the high-quality interface in the heterojunctions. In an organic solar cell device based on the p-n junction, we show the device exhibits gate-tunable open-circuit voltage up to 1.04 V, a record-high value in organic single crystalline photovoltaics.

摘要

新兴的高性能有机光伏器件的基石是体异质结,其通常既包含结构无序,又包含具有界面缺陷的双连续互穿晶界。这一特性使得对其工作机制的基本理解变得复杂。具有明确界面和定制层厚度的高度有序的晶体有机p-n异质结,对于理解有机异质结的本质非常理想。然而,直接生长这样的晶体有机p-n异质结仍然是一个巨大的挑战。在这项工作中,我们报告了一种制造基于单层分子晶体的p-n异质结的设计原理。在有机场效应晶体管配置中,我们实现了与单组分单层分子晶体器件相当的平衡双极性电荷传输,证明了异质结中高质量的界面。在基于p-n结的有机太阳能电池器件中,我们展示了该器件具有高达1.04 V的栅极可调开路电压,这是有机单晶光伏中的创纪录高值。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fb40/8119440/6f19dd602cab/41467_2021_23066_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fb40/8119440/47fc602945f9/41467_2021_23066_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fb40/8119440/6bc0051fc4ff/41467_2021_23066_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fb40/8119440/613c20e9bb55/41467_2021_23066_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fb40/8119440/6f19dd602cab/41467_2021_23066_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fb40/8119440/47fc602945f9/41467_2021_23066_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fb40/8119440/6bc0051fc4ff/41467_2021_23066_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fb40/8119440/613c20e9bb55/41467_2021_23066_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fb40/8119440/6f19dd602cab/41467_2021_23066_Fig4_HTML.jpg

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